Publications

Affichage de 7171 à 7180 sur 16185


  • Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode.…

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

  • Article dans une revue

On the effect of δ-doping in self-switching diodes

Andreas Westlund, Ignacio Iñiguez-De-La-Torre, Per-Åke Nilsson, Tomas González, Javier Mateos, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, L. Desplanque, Xavier Wallart, Jan Grahn

Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design…

Applied Physics Letters, 2014, 105 (9), 093505, 5 p. ⟨10.1063/1.4894806⟩. ⟨hal-01061584⟩

  • Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩

  • Article dans une revue

Electrical properties of lead-free KNN films on SRO/STO by RF magnetron sputtering

T. Li, G.S. Wang, K. Li, G. Du, Y. Chen, Z.Y. Zhou, Denis Remiens, X.L. Dong

Ceramics International, 2014, 40, pp.1195-1198. ⟨10.1016/j.ceramint.2013.07.005⟩. ⟨hal-00903762⟩

  • Communication dans un congrès

Approach-to-equilibrium molecular dynamics for thermal conductivies and boundary conductances

Pier Luca Palla, Evelyne Lampin, Pierre-Arnaud Francioso, Fabrizio Cleri

Thermal transport is simulated at the atomic scale by approach-to-equilibrium molecular dynamics simulations (AEMD) [1]. In this method, a hot and a cold regions are delimited, before the approach-to-equilibrium is simulated by releasing the thermal constraint. The temperature difference between…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00966169⟩

  • Communication dans un congrès

[Invited] MEMS research, applications and results

S. Arscott

Workshop on Nanoscale Processing for MEMS and NEMS, 2014, Villeneuve d'Ascq, France. ⟨hal-00976620⟩

  • Communication dans un congrès

Pushing the limits of GaN-on-silicon device breakdown voltage for high power applications

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub

CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976633⟩