Publications

• Communication dans un congrès

Wafer-scale integration of piezoelectric actuation capabilities in nanoelectromechanical systems resonators

Denis Dezest, Fabrice Mathieu, Laurent Mazenq, Caroline Soyer, Jean Costecalde, Denis Remiens, Olivier Thomas, Jean-François Deü, Liviu Nicu

In this work, we demonstrate the integration of piezoelectric actuation means on arrays of nanocantilevers at the wafer scale. We use lead titanate zirconate (PZT) as piezoelectric material mainly because of its excellent actuation properties even when geometrically constrained at extreme scale

2013 Nanomechanical Sensing Workshop, May 2013, Stanford, USA, United States. pp.0. ⟨hal-03165172⟩

• Communication dans un congrès

Optical activity for twisted sub-wavelength hole arrays

S.X. Wang, F. Garet, M. Astic, Eric Lheurette, J.L. Coutaz, D. Lippens

7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2013, 2013, Bordeaux, France. Session I.1, 3 p., published by Metamorphose-VI, CD-ISBN 978-952-67611-5-2. ⟨hal-00881303⟩

• Article dans une revue

Metallic nanoparticles enhanced the spontaneous emission of semiconductor nanocrystals embedded in nanoimprinted photonic crystals

V. Reboud, Gaëtan Lévêque, M. Striccoli, T. Placido, A. Panniello, M.L. Curri, J. A. Alducin, T. Kehoe, N. Kehagias, D. Mecerreyes, S. Newcomb, D. Iacopino, G. Redmond, C.M. Sotomayor Torres

Nanoscale, 2013, 5, pp.239-245. ⟨10.1039/C2NR32134C⟩. ⟨hal-00796414⟩

• Article dans une revue

Recent advances in the development of graphene-based surface plasmon resonance (SPR) interfaces

Sabine Szunerits, N. Maalouli, E. Wijaya, Jean-Pierre Vilcot, Rabah Boukherroub

Analytical and Bioanalytical Chemistry, 2013, 405, pp.1435-1443. ⟨10.1007/s00216-012-6624-0⟩. ⟨hal-00796418⟩

• Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

• Communication dans un congrès

Enhanced gold film-coupled graphene-based plasmonic nanosensor

Rana Nicolas, Thomas Maurer, Julien Proust, Jérémie Béal, Silvere Schuermans, Edy Wijaya, Jean-Pierre Vilcot, Jerome Plain, Rabah Boukherroub, Pierre-Michel Adam, Sabine Szunerits, Gaëtan Lévêque, Abdellatif Akjouj, Bahram Djafari-Rouhani

Summer School of Plasmonics, SSOP3, 2013, Cargese, France. ⟨hal-01063873⟩

• Communication dans un congrès

Radio frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud

8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, 2012, Montpellier, France. pp.73-78, ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00797713⟩

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Communication dans un congrès

Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz

Stéphanie Rennesson, François Lecourt, N. Defrance, M. Chmielowska, S. Chenot, Marie Lesecq, Virginie Hoel, Etienne Okada, Yvon Cordier, Jean-Claude de Jaeger

Joint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France. ⟨hal-00987957⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩