Publications

Affichage de 7221 à 7230 sur 15761


  • Article dans une revue

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Paul Sangare, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, Christophe Gaquière, Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Jean-Francois Millithaler, Javier Mateos, Tomás González

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both…

Journal of Applied Physics, 2013, 113 (3), pp.034305. ⟨10.1063/1.4775406⟩. ⟨hal-00796434⟩

  • Article dans une revue

Piezoresistance of nano-scale silicon up to 2 GPa in tension

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

Applied Physics Letters, 2013, 102, pp.031911-1-4. ⟨10.1063/1.4788919⟩. ⟨hal-00795970⟩

  • Article dans une revue

Intrinsic bandgap of cleaved ZnO(110) surfaces

A. Sabitova, P. Ebert, A. Lenz, S. Schaafhausen, L. Ivanova, M. Dähne, A. Hoffmann, R.E. Dunin-Borkowski, A. Förster, B. Grandidier, H. Eisele

Applied Physics Letters, 2013, 102, pp.021608-1-4. ⟨10.1063/1.4776674⟩. ⟨hal-00796416⟩

  • Communication dans un congrès

Strain effect on the electronic properties of molecular junctions on sub 10-nm-diameter gold nanocrystals as determined by scanning probe microscopy

N. Clement, S. Desbief, K. Smaali, G. Patriarche, P. Leclere, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878800⟩

  • Communication dans un congrès

[Invited] Graphene growth by molecular beam epitaxy (on SiC)

E. Moreau, S. Godey, X. Wallart, I. Razado-Colambo, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878497⟩

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