Publications

• Communication dans un congrès

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

Marina Deng, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine, Daniel Gloria, Nicolas Derrier, Pascal Chevalier

By taking into account the transistor parasitic lumped elements originated from the contact pads and the metal interconnections including the top-down connection, an enhanced de-embedding procedure for on-wafer G-band measurements has been developed and implemented. This method relies on a…

European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013: 43rd European Microwave Conference, Oct 2013, Nuremberg, Germany. ⟨hal-01402459⟩

• Article dans une revue

Modeling of the near-field electromagnetic radiation of power cables in automotives or aeronautics

F. Costa, C. Gautier, B. Revol, J. Genoulaz, Bernard Demoulin

IEEE Transactions on Power Electronics, 2013, 28 (10), pp.4580 - 4593. ⟨10.1109/TPEL.2012.2232310⟩. ⟨hal-01627111⟩

• Communication dans un congrès

Localisation et imagerie de défauts dans des structures réverbérantes par corrélation de champ acoustique

Lynda Chehami, Emmanuel Moulin, Jamal Assaad, Julien de Rosny, Claire Prada, Farouk Benmeddour

Journées Techniques COSAC 2013, Sep 2013, Toulouse, France. ⟨hal-00878899⟩

• Article dans une revue

Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible

Claudio Attaccalite, Ludger Wirtz, Andrea Marini, Angel Rubio

Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response.…

Scientific Reports, 2013, 3, pp.2698. ⟨10.1038/srep02698⟩. ⟨hal-00865828⟩

• Communication dans un congrès

Electronic and transport properties of semiconductor nanowires

Christophe Delerue, Yann Michel Niquet, Jing Li, V.H. Nguyen, Triozon F., Christophe Krzeminski, Luigi Genovese, Hector Mera, Denis Rideau

5th International Conference on One-dimensional Nanomaterials, ICON13, Sep 2013, Annecy, France. ⟨hal-03317239⟩

• Communication dans un congrès

Education in high tech services at ENSIAME

Samuel Dupont

International Forum on Best Practices for EU Service Interoperability - Challenges for Higher Education and Research, Sep 2013, Bucharest, Romania. ⟨hal-03549597⟩

• Article dans une revue

Anomalous quantum confinement of the longitudinal optical phonon mode in PbSe quantum dots

Justin Habinshuti, O. Kilian, O. Cristini-Robbe, A. Sashchiuk, A. Addad, S. Turrell, E. Lifshitz, B. Grandidier, L. Wirtz

We have investigated the diameter dependence of the Raman spectra of lead selenide nanocrystals. The first-order Raman peak at about 136 cm⁻¹ and its second-order overtone at twice this wavenumber move up in energy with decreasing nanocrystal diameter. This anomalous behavior…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88, pp.115313-1 - 115313-7. ⟨10.1103/PhysRevB.88.115313⟩. ⟨hal-00867600⟩

• Article dans une revue

Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two

Efterpi Kalesaki, Wiel H. Evers, Guy Allan, Daniel Vanmaekelbergh, Christophe Delerue

The electronic structure of recently synthesized square superlattices with atomic coherence composed of PbSe, CdSe, or CdTe nanocrystals (NCs) attached along {100} facets is investigated using tight-binding calculations. In experimental realizations of these systems [W. H. Evers et al., Nano Lett.…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88, pp.115431-1-9. ⟨10.1103/PhysRevB.88.115431⟩. ⟨hal-00871971⟩

• Article dans une revue

Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation

Fabian Cadiz, D. Paget, A. Rowe, V. Berkovits, V. Ulin, S. Arscott, Emilien Peytavit

Journal of Applied Physics, 2013, 114 (10), pp.103711. ⟨10.1063/1.4821139⟩. ⟨hal-02345653⟩

• Article dans une revue

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

Kian Hua Tan, Sonn Fatt Yoon, Satrio Wicaksono, Wan Khai Loke, D. S. Li, Naïma Saadsaoud, Charlotte Tripon-Canseliet, Jean-Francois Lampin, Didier Decoster, Jean Chazelas

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of…

Applied Physics Letters, 2013, 103 (11), pp.111113. ⟨10.1063/1.4820797⟩. ⟨hal-00861768⟩