Publications

Affichage de 7291 à 7300 sur 15871


  • Article dans une revue

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Pierre Capiod, Tao Xu, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Liverios Lymperakis, J. Neugebauer, Philippe Caroff, Rafal E Dunin-Borkowski, Philipp Ebert, B. Grandidier

Applied Physics Letters, 2013, 103, pp.122104-1-4. ⟨10.1063/1.4821293⟩. ⟨hal-00871957⟩

  • Communication dans un congrès

Unusual acoustic behavior in a large frequency range of a foam-like metallic structure

Anne-Christine Hladky, Jerome O. Vasseur, Charles Croënne, L. Haumesser, A.N. Norris

2013 International Workshop on Acoustic Transduction Materials and Devices, 2013, State College, PA, United States. ⟨hal-00818089⟩

  • Communication dans un congrès

Focusing capability of a phononic crystal based on a hollow metallic structure

Anne-Christine Hladky, Charles Croënne, Jerome O. Vasseur, L. Haumesser, A.N. Norris

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00934424⟩

  • Communication dans un congrès

Monte Carlo analysis of thermal effects in self-switching diodes

J.F. Millithaler, I. Iniguez-De-La-Torre, T. Gonzalez, J. Mateos, P. Sangare, Guillaume Ducournau, Christophe Gaquière

9th Spanish Conference on Electron Devices, CDE 2013, 2013, Valladolid, Spain. pp.45-48, ⟨10.1109/CDE.2013.6481338⟩. ⟨hal-00806588⟩

  • Communication dans un congrès

A 1 GHz SAW oscillator on epitaxial GaN/Si substrate : toward co-integrated frequency sources

M. Faucher, G. Martin, J.M. Friedt, S. Ballandras

GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN for the fabrication of surface acoustic wave oscillators. The first…

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. paper IFCS-EFTF1-B2-5, 21-24, ⟨10.1109/EFTF-IFC.2013.6702231⟩. ⟨hal-00944027⟩

  • Chapitre d'ouvrage

Graphene growth by molecular beam epitaxy

D. Vignaud, E. Moreau

Henini M. Molecular beam epitaxy, Elsevier, chapter 23, 547-557, 2013, 978-0-12-387839-7. ⟨10.1016/B978-0-12-387839-7.00023-3⟩. ⟨hal-00878454⟩

  • Communication dans un congrès

Low-IQ : MMIC ultra faible consommation cryogénique et ambiant pour télécommunications spatiales en bande Q

S. Bollaert, Francois Danneville, Yannick Roelens, L. Desplanque, Cyrille Gardes, Sonia Bagumako, Cédric Chambon, Benoît Fauroux, Jean-Philippe Fraysse, Patrice Régnier, Michel Maignan, Peter Friijlink, Rémy Leblanc, Marc Marilier

Les Rencontres du Numérique, 2013, Paris, France. ⟨hal-00974542⟩

  • Communication dans un congrès

Graphene layers grown by RTP-CVD on nickel and copper and their properties

E. Pichonat, H. Kim, D. Vignaud, R. Fleurier, H. Happy

European Workshop on Epitaxial Graphene, EWEG 2013, 2013, Aussois, France. ⟨hal-00811763⟩

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