Publications
Affichage de 7301 à 7310 sur 15761
HEMTs 100nm AlSb/InAs pour applications faible bruit, faible consommation
S. Bagumako, C. Gardes, L. Desplanque, Nicolas Wichmann, Francois Danneville, S. Bollaert, X. Wallart, Yannick Roelens
18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA1-3, 4 p. ⟨hal-00878375⟩
High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate
J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert
37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.15-16. ⟨hal-00828414⟩
Fabrication, characterization, and physical analysis of AlGaN/GaN HEMTs on flexible substrates
N. Defrance, F. Lecourt, Y. Douvry, Marie Lesecq, Virginie Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, Jean-Claude de Jaeger
IEEE Transactions on Electron Devices, 2013, 60, pp.1054-1059. ⟨10.1109/TED.2013.2238943⟩. ⟨hal-00797212⟩
Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
Pierre Capiod, Tao Xu, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Liverios Lymperakis, J. Neugebauer, Philippe Caroff, Rafal E Dunin-Borkowski, Philipp Ebert, B. Grandidier
4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2013, Sep 2013, Lake Arrowhead, CA, United States. ⟨hal-00956276⟩
Experimental analysis of dense multipath components in an industrial environment
Emmeric Tanghe, Davy Gaillot, M. Lienard, Luc Martens, Wout Joseph
7th COST IC1004 Management Committee and Scientific Meeting, 2013, Ilmenau, Germany. ⟨hal-00961436⟩
[Invited] Scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy
I. Razado-Colambo, J.P. Nys, X. Wallart, E. Moreau, S. Godey, J. Avila, M.C. Asensio, D. Vignaud
PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878498⟩
All E-beam technology of GaN Schottky diodes and their large-signal characteristics
C. Jin, M. Zaknoune, D. Ducatteau, D. Pavlidis
37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.11-12. ⟨hal-00828411⟩
Iterative soft-Kalman channel estimation for fast time-varying MIMO-OFDM channels
E.P. Simon, M.A. Khalighi
IEEE Wireless Communications Letters, 2013, 2, pp.599-602. ⟨10.1109/WCL.2013.081413.130515⟩. ⟨hal-00922487⟩
Addition of HfO$_2$ interface layer for improved synaptic performance of phase change memory (PCM) devices
M. Suri, O. Bichler, Q. Hubert, L. Perniola, V. Sousa, C. Jahan, D. Vuillaume, C. Gamrat, B. de Salvo
Solid-State Electronics, 2013, 79, pp.227-232. ⟨10.1016/j.sse.2012.09.006⟩. ⟨hal-00795982⟩
Mixed metallic Ba(Co,Mn)X0.2-xO3-δ (X=F, Cl) hexagonal perovskites
M. Iorgulescu, P. Roussel, N. Tancret, N. Renaut, Nicolas Tiercelin, O. Mentre
Journal of Solid State Chemistry, 2013, 198, pp.210-217. ⟨10.1016/j.jssc.2012.09.040⟩. ⟨hal-00796408⟩