Publications

Affichage de 7301 à 7310 sur 15761


  • Communication dans un congrès

HEMTs 100nm AlSb/InAs pour applications faible bruit, faible consommation

S. Bagumako, C. Gardes, L. Desplanque, Nicolas Wichmann, Francois Danneville, S. Bollaert, X. Wallart, Yannick Roelens

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J2-DA1-3, 4 p. ⟨hal-00878375⟩

  • Communication dans un congrès

High cut-off frequency performances of 100nm-gate InAlAs/InGaAs high electron mobility transistors on polyimide flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.15-16. ⟨hal-00828414⟩

  • Article dans une revue

Fabrication, characterization, and physical analysis of AlGaN/GaN HEMTs on flexible substrates

N. Defrance, F. Lecourt, Y. Douvry, Marie Lesecq, Virginie Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, Jean-Claude de Jaeger

IEEE Transactions on Electron Devices, 2013, 60, pp.1054-1059. ⟨10.1109/TED.2013.2238943⟩. ⟨hal-00797212⟩

  • Communication dans un congrès

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Pierre Capiod, Tao Xu, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Liverios Lymperakis, J. Neugebauer, Philippe Caroff, Rafal E Dunin-Borkowski, Philipp Ebert, B. Grandidier

4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2013, Sep 2013, Lake Arrowhead, CA, United States. ⟨hal-00956276⟩

  • Communication dans un congrès

[Invited] Scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, E. Moreau, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878498⟩

  • Communication dans un congrès

All E-beam technology of GaN Schottky diodes and their large-signal characteristics

C. Jin, M. Zaknoune, D. Ducatteau, D. Pavlidis

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.11-12. ⟨hal-00828411⟩

  • Article dans une revue

Mixed metallic Ba(Co,Mn)X0.2-xO3-δ (X=F, Cl) hexagonal perovskites

M. Iorgulescu, P. Roussel, N. Tancret, N. Renaut, Nicolas Tiercelin, O. Mentre

Journal of Solid State Chemistry, 2013, 198, pp.210-217. ⟨10.1016/j.jssc.2012.09.040⟩. ⟨hal-00796408⟩

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