Publications

Affichage de 7351 à 7360 sur 15761


  • Article dans une revue

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩. ⟨hal-00795954⟩

  • Communication dans un congrès

[Invited] Strain effects on carrier mobility in Si and Ge nanowires

Y.M. Niquet, J. Li, D. Rideau, B. Videau, Christophe Krzeminski, C. Delerue

5ème Assemblée Générale du GdR Nanofils Semiconducteurs, 2013, Saint-Martin-de-Londres, France. ⟨hal-00811810⟩

  • Communication dans un congrès

AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides

Adrien Cutivet, Alain Agboton, Philippe Altuntas, François Lecourt, Marie Lesecq, Nicolas Defrance, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger, François Boone, Hassan Maher

This paper focuses on the electrical investigation of various AlN/Si interfaces by means of broadband characterization and modeling of CPW (coplanar waveguide) for frequencies up to 50 GHz. These electric measurements are performed under different biases and temperatures in order to investigate the…

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38. ⟨hal-00828412⟩

  • Chapitre d'ouvrage

Modeling and design of BAW resonators and filters for integration in a UMTS transmitter

Matthieu Chatras, Stéphane Bila, S. Giraud, L. Catherinot, J. Fan, Dominique Cros, M. Aubourg, A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin, J.B. David, A. Reinhardt, L. Leyssenne, E. Kerhervé

Marco G. Beghi. Modeling and measurement methods for acoustic waves and for acoustic microdevices, InTech, pp.323-354, 2013, 978-953-51-1189-4. ⟨10.5772/56026⟩. ⟨hal-00878455⟩

  • Communication dans un congrès

THz wireless communications at high data rate using plasma-wave field-effect transistors for detection: State of the art and perspectives

S. Blin, L. Tohme, P. Nouvel, A. Pénarier, D. Coquillat, W. Knap, Guillaume Ducournau, Jean-Francois Lampin, S. Bollaert, S. Hisatake, T. Nagatsuma

GDRI – THz, 2013, Montpellier, France. ⟨hal-01929183⟩

  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

  • Article dans une revue

Heterozygous and homozygous JAK2(V617F) states modeled by induced pluripotent stem cells from myeloproliferative neoplasm patients

Joseph Saliba, S. Hamidi, G. Lenglet, T. Langlois, J. Yin, X. Cabagnols, L. Secardin, C. Legrand, A. Galy, P. Opolon, B. Benyahia, E. Solary, O. A. Bernard, L. Chen, N. Debili, H. Raslova, F. Norol, W. Vainchenker, I. Plo, A. Di Stefano

JAK2(V617F) is the predominant mutation in myeloproliferative neoplasms (MPN). Modeling MPN in a human context might be helpful for the screening of molecules targeting JAK2 and its intracellular signaling. We describe here the derivation of induced pluripotent stem (iPS) cell lines from 2…

PLoS ONE, 2013, 8 (9), pp.e74257. ⟨10.1371/journal.pone.0074257⟩. ⟨hal-02881155⟩

  • Article dans une revue

AlGaN/GaN HEMTs on silicon substrate with 206-GHz FMAX

S. Bouzid-Driad, H. Maher, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Renvoise, P. Frijlink

IEEE Electron Device Letters, 2013, 34, pp.36-38. ⟨10.1109/LED.2012.2224313⟩. ⟨hal-00796433⟩

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