Publications

• Communication dans un congrès

94-GHz load pull measurements of SiGe HBT by extracting output power density in W-band

Issam Hasnaoui, Elodie Canderle, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on lastgeneration SiGe HBTs by extracting the input reflection hot Sparameter (…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-4, 400-403. ⟨hal-00922493⟩

• Communication dans un congrès

Analysis of PLC channels in aircraft environment and optimization of some OFDM parameters

Thomas Larhzaoui, Fabienne Nouvel, Jean-Yves Baudais, Virginie Degardin, Pierre Laly

8th International Conference on Systems and Networks Communications, ICSNC 2013, 2013, Venice, Italy. pp.65-69. ⟨hal-00879848⟩

• Communication dans un congrès

[Invited] Terahertz radiation from meta-atom-loaded photoconductive antennas

Keisuke Takano, T. Nishida, Boyoung Kang, H. Sasaki, F. Miyamaru, Mitsuo Wada Takeda, Willie J. Padilla, M. Hangyo, Tahsin Akalin

4th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META'13, 2013, Sharjah, United Arab Emirates. ⟨hal-00811842⟩

• Article dans une revue

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Paul Sangare, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, Christophe Gaquière, Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Jean-Francois Millithaler, Javier Mateos, Tomás González

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both…

Journal of Applied Physics, 2013, 113 (3), pp.034305. ⟨10.1063/1.4775406⟩. ⟨hal-00796434⟩

• Article dans une revue

Piezoresistance of nano-scale silicon up to 2 GPa in tension

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

Applied Physics Letters, 2013, 102, pp.031911-1-4. ⟨10.1063/1.4788919⟩. ⟨hal-00795970⟩

• Article dans une revue

Intrinsic bandgap of cleaved ZnO(110) surfaces

A. Sabitova, P. Ebert, A. Lenz, S. Schaafhausen, L. Ivanova, M. Dähne, A. Hoffmann, R.E. Dunin-Borkowski, A. Förster, B. Grandidier, H. Eisele

Applied Physics Letters, 2013, 102, pp.021608-1-4. ⟨10.1063/1.4776674⟩. ⟨hal-00796416⟩

• Article dans une revue

An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

Thomas Dargent, Kamel Haddadi, T. Lasri, N. Clément, D. Ducatteau, Bernard Legrand, H. Tanbakuchi, Didier Theron

We report on an adjustable interferometric set-up for Scanning Microwave Microscopy. This interferometer is designed in order to combine simplicity, a relatively flexible choice of the frequency of interference used for measurements as well as the choice of impedances range where the interference…

Review of Scientific Instruments, 2013, 84 (12), pp.123705. ⟨10.1063/1.4848995⟩. ⟨hal-00922585⟩

• Communication dans un congrès

Strain effect on the electronic properties of molecular junctions on sub 10-nm-diameter gold nanocrystals as determined by scanning probe microscopy

N. Clement, S. Desbief, K. Smaali, G. Patriarche, P. Leclere, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878800⟩

• Communication dans un congrès

[Invited] Graphene growth by molecular beam epitaxy (on SiC)

E. Moreau, S. Godey, X. Wallart, I. Razado-Colambo, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878497⟩

• Article dans une revue

Effect of antimony on structure strained quantum well laser

Abdelkader Aissat, Farid Ykhlef, Said Nacer, Jean-Pierre Vilcot

This work consists of highly strained quantum well GaxIn1-xNyAs1-y-zSbz quaternary structure modeling. We have studied the effect nitrogen and antimony incorporation into ternary semiconductor III-V alloys. We found that incorporating nitrogen in the structure leads to a splitting of the conduction…

Journal of Optoelectronics and Advanced Materials, 2013, 15, pp.1185-1187. ⟨hal-00922579⟩