Publications

• Communication dans un congrès

Three-Paths Microwave Inteferometric System Based on a Six-Port technique

Kamel Haddadi, Tuami Lasri

This paper presents a new type of six-port instrument to meet the specific needs of electrical characterization tools for impedances clearly different than the standard 50 Omega reference impedance. A method is developed for the precise adjustment of the reference impedance of the measurement…

43rd European Microwave Conference (EuMC), Oct 2013, Nuremberg, Allemagne. pp.1603-1606. ⟨hal-03224674⟩

• Proceedings/Recueil des communications

On Lagrangian in Maxwell's electromagnetic theory

Raffaele Pisano

Scientiarum Historia VI, The Federate University of Rio de Janeiro Press, pp.44-59, 2013, ISSN 2176-123X. ⟨hal-04517937⟩

• Article dans une revue

Inline high frequency ultrasonic particle sizer

Fabrice Lefebvre, J. Petit, Georges Nassar, P. Debreyne, Guillaume Delaplace, Bertrand Nongaillard

This paper reports the development of a new method of particle sizing in a liquid. This method uses high frequency focused ultrasounds to detect particles crossing the focal zone of an ultrasonic sensor and to determine their size distribution by processing the reflected echoes. The major advantage…

Review of Scientific Instruments, 2013, 84 (7), pp.075101. ⟨10.1063/1.4811847⟩. ⟨hal-00877657⟩

• Article dans une revue

Low-temperature crystallization of high performance Pb0.4Sr 0.6TiO3 films compatible with the current silicon-based microelectronic technology

K. Li, Denis Remiens, X.L. Dong, J. Costecalde, N. Sama, T. Li, G. Du, Y. Chen, G.S. Wang

Applied Physics Letters, 2013, 102, 212901, 4 p. ⟨10.1063/1.4807792⟩. ⟨hal-00877663⟩

• Article dans une revue

Hidden surface states at non-polar GaN (101¯0) facets : intrinsic pinning of nanowires

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stiévenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

Applied Physics Letters, 2013, 103, 152101, 4 p. ⟨10.1063/1.4823723⟩. ⟨hal-00877636⟩

• Article dans une revue

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged…

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩

• Autre publication scientifique

Etude de films minces de CuInS2, CuIn1-xGaxS2, et Cu2ZnSnS4, élaborés par voie sol-gel, destinés aux applications photovoltaïques

Yoan Bourlier

2013. ⟨hal-00825116⟩