Publications

Affichage de 7491 à 7500 sur 16106


  • Article dans une revue

Droplet transport by electrowetting : lets get rough !

F. Lapierre, M. Jonsson-Niedziolka, Yannick Coffinier, Rabah Boukherroub, V. Thomy

Microfluidics and Nanofluidics, 2013, 15, pp.327-336. ⟨10.1007/s10404-013-1149-1⟩. ⟨hal-00872089⟩

  • Communication dans un congrès

Effet des contraintes sur les propriétés électroniques de nanocristaux facettés d'or thiolés de 10 nm de diamètre

N. Clement, S. Desbief, K. Smaali, J.P. Nys, M. Cordier, G. Patriarche, S. Lamant, J. Oden, P. Leclere, D. Vuillaume

16ème Forum des Microscopies à Sondes Locales, 2013, Spa, Belgique. papier OC33, 62-63. ⟨hal-00820951⟩

  • Article dans une revue

Characteristics of highly (001) oriented (K,Na)NbO3 films grown on LaNiO3 bottom electrodes by RF magnetron sputtering

T. Li, G.S. Wang, Denis Remiens, X.L. Dong

Ceramics International, 2013, 39, pp.1359-1363. ⟨10.1016/j.ceramint.2012.07.074⟩. ⟨hal-00796459⟩

  • Article dans une revue

What is - and what is not - an optical isolator

D. Jalas, A. Petrov, M. Eich, W. Freude, S.H. Fan, Z.F. Yu, R. Baets, M. Popovic, A. Melloni, J.D. Joannopoulos, M. Vanwolleghem, C.R. Doerr, H. Renner

Nature Photonics, 2013, 7, pp.579-582. ⟨10.1038/nphoton.2013.185⟩. ⟨hal-00877669⟩

  • Article dans une revue

Enhanced tunability performance of low temperature crystallized Pb0.4Sr0.6TiO3 thin films derived from distinct microstructure

K. Li, Denis Remiens, X.L. Dong, J. Costecalde, N. Sama, X.Y. Lei, T. Li, G. Du, G.S. Wang

Materials Letters, 2013, 107, pp.361-363. ⟨10.1016/j.matlet.2013.06.058⟩. ⟨hal-00877656⟩

  • Article dans une revue

Analytical modeling and analysis of AlmGa1-mN/GaN HEMTs employing both field-plate and high-k dielectric stack for high-voltage operation

M. Kaddeche, A. Telia, A. Soltani

Journal of Computational Electronics, 2013, 12, pp.501-510. ⟨10.1007/s10825-013-0468-5⟩. ⟨hal-00872008⟩

  • Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd European Solid-State Device Research Conference, ESSDERC 2013, 2013, Bucharest, Romania. pp.57-60, ⟨10.1109/ESSDERC.2013.6818818⟩. ⟨hal-00997378⟩

  • Ouvrages

The Dialectic Relation Between Physics and Mathematics in the XIXth Century

Evelyne Barbin, Raffaele Pisano

Springer Netherlands, 16, 2013, 978-94-007-5379-2. ⟨10.1007/978-94-007-5380-8⟩. ⟨hal-04517737⟩

  • Communication dans un congrès

Temperature dependence of the conduction mechanisms through a PZT thin film

C. Jegou, L. Michalas, T. Maroutian, G. Agnus, P. Aubert, P. Lecoeur, M. Koutsoureli, G. Papaioannou, L. Largeau, David Troadec, A. Leuliet

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium H - Multifunctional binary and complex oxides films and nanostructures for microelectronic applications, 2013, Strasbourg, France. ⟨hal-00819697⟩