Publications

• COMM

Fabrication of plasmonic arrays for THz QCL beam-shaping

Mokhtar Zehar, Miguel Beruete, Haian Sebai, H. Agnes, Karine Blary, Miguel Navarro-Cia, Tahsin Akalin

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811838⟩

• COMM

AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides

Adrien Cutivet, Alain Agboton, Philippe Altuntas, François Lecourt, Marie Lesecq, Nicolas Defrance, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger, François Boone, Hassan Maher

This paper focuses on the electrical investigation of various AlN/Si interfaces by means of broadband characterization and modeling of CPW (coplanar waveguide) for frequencies up to 50 GHz. These electric measurements are performed under different biases and temperatures in order to investigate the…

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38. ⟨hal-00828412⟩

• COMM

Strain effect on the electronic properties of molecular junctions on sub 10-nm-diameter gold nanocrystals as determined by scanning probe microscopy

N. Clement, S. Desbief, K. Smaali, G. Patriarche, P. Leclere, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878800⟩

• ART

Global transmission and reflection coefficients of the ultrasonic component in porous media : a new approach

Georges Nassar, Amina Medjdoub, N. Saad

The purpose of this paper is to propose a new approach to determining the global ultrasonic transmission and reflection coefficients in a random porous medium. Boundary conditions at the interface of the medium were used to determine local transmission and reflection coefficients. A study of the…

Ultrasonics, 2013, 53, pp.1097-1103. ⟨10.1016/j.ultras.2013.02.004⟩. ⟨hal-00823965⟩

• ART

Comparison of gold and silver/gold bimetallic surface for highly sensitive near-infrared SPR sensor at 1550 nm

J. Hottin, E. Wijaya, L. Hay, Sophie Maricot, M. Bouazaoui, Jean-Pierre Vilcot

Plasmonics, 2013, 8, pp.619-624. ⟨10.1007/s11468-012-9446-1⟩. ⟨hal-00823962⟩

• ART

Lysozyme detection on aptamer functionalized graphene-coated SPR interfaces

P. Subramanian, A. Lesniewski, I. Kaminska, Alexis Vlandas, A. Vasilescu, J. Niedziolka-Jonsson, E. Pichonat, H. Happy, Rabah Boukherroub, Sabine Szunerits

Biosensors and Bioelectronics, 2013, 50, pp.239-243. ⟨10.1016/j.bios.2013.06.026⟩. ⟨hal-00877645⟩

• ART

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

J.Y. Song, S. Bouchoule, G. Patriarche, E. Galopin, A.M. Yacomotti, E. Cambril, Q.G. Kou, David Troadec, J.J. He, J.C. Harmand

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces…

Physica Status Solidi A (applications and materials science), 2013, 210, pp.1171-1177. ⟨10.1002/pssa.201228770⟩. ⟨hal-00872060⟩

• COMM

Performance analysis of OCDMA systems with 2-D optical codes in MMF channels

H. Mrabet, Iyad Dayoub, R. Attia

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 252, 1-4. ⟨hal-00804740⟩

• COMM

Technique interférométrique pour la caractérisation diélectrique en milieu liquide par ligne coaxiale ouverte

H. Balki, M. Moutaoukil, Kamel Haddadi, T. Lasri

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Maroc. papier 266, 1-4. ⟨hal-00804745⟩

• COMM

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩