Publications
Affichage de 7541 à 7550 sur 16173
Electron transport in passivated AlGaN/GaN/Si HEMTs
M. Gassoumi, H. Mosbahi, A. Soltani, Vanessa Avramovic, M.A. Zaidi, Christophe Gaquière, H. Mejri, H. Maaref
Materials Science in Semiconductor Processing, 2013, 16, pp.1775-1778. ⟨10.1016/j.mssp.2013.06.025⟩. ⟨hal-00872024⟩
Temperature dependence of the conduction mechanisms through a PZT thin film
C. Jegou, L. Michalas, T. Maroutian, G. Agnus, P. Aubert, P. Lecoeur, M. Koutsoureli, G. Papaioannou, L. Largeau, David Troadec, A. Leuliet
European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium H - Multifunctional binary and complex oxides films and nanostructures for microelectronic applications, 2013, Strasbourg, France. ⟨hal-00819697⟩
Solution-based graphene for high-performance flexible electronics
C. Sire, J. Azevedo, S. Campidelli, Sylvie Lepilliet, J.W.T. Seo, M.C. Hersam, S. Sorgues, C. Colbeau-Justin, J.J. Benattar, Gilles Dambrine, H. Happy, Vincent Derycke
3rd Graphene Conference, Graphene 2013, 2nd ImagineNano Event, 2013, Bilbao, Spain. pp.1-2. ⟨hal-00819705⟩
A reconfigurable IF to DC sub-sampling receiver architecture with embedded channel filtering for 60 GHz applications
B. Grave, A. Frappe, A. Kaiser
IEEE Transactions on Circuits and Systems I: Regular Papers, 2013, 60, pp.1220-1231. ⟨10.1109/TCSI.2013.2248791⟩. ⟨hal-00819465⟩
Antimony mediated control of misfit dislocation and strain at the highly lattice mismatched GaSb/GaAs interface
Y. Wang, P. Ruterana, Jie Chen, S. Kret, S. El Kazzi, C. Genevois, L. Desplanque, X. Wallart
ACS Applied Materials & Interfaces, 2013, 5, pp.9760-9764. ⟨10.1021/am4028907⟩. ⟨hal-00877634⟩
Impact of PCM resistance-drift in neuromorphic systems and drift-mitigation strategy
M. Suri, D. Garbin, O. Bichler, D. Querlioz, D. Vuillaume, C. Gamrat, B. de Salvo
9th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, 2013, New-York, NY, United States. pp.140-145, ⟨10.1109/NanoArch.2013.6623059⟩. ⟨hal-00877744⟩
Highly stable low noise/high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz
F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland, R. Silvestri, M. Meneghini, E. Zanoni, G. Meneghesso
IEEE International Reliability Physics Symposium, IRPS 2013, 2013, Monterey, CA, United States. paper 3C.3, 6 p., ⟨10.1109/IRPS.2013.6531985⟩. ⟨hal-00877718⟩
CW source based on photomixing with output power reaching 1.8 mW at 250 GHz
Emilien Peytavit, P. Latzel, F. Pavanello, Guillaume Ducournau, Jean-Francois Lampin
IEEE Electron Device Letters, 2013, 34, pp.1277-1279. ⟨10.1109/LED.2013.2277574⟩. ⟨hal-00877670⟩
W-band RF-MEMS Dicke switch networks in a GaAs MMIC process
S. Bint Reyaz, C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, P.A. Rolland, B. Grandchamp, P. Rantakari, T. Vähä-Heikkilä
Microwave and Optical Technology Letters, 2013, 55, pp.2849-2853. ⟨10.1002/mop.27983⟩. ⟨hal-00871901⟩
120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax
C. Gardes, S.M. Bagumako, L. Desplanque, Nicolas Wichmann, Francois Danneville, S. Bollaert, X. Wallart, Yannick Roelens
25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, 2013, Kobe, Japan. paper MoPI-25, 2 p., ⟨10.1109/ICIPRM.2013.6562604⟩. ⟨hal-00877719⟩