Publications

• Article dans une revue

Ultrafast optical technique for measuring the electrical dependence of the elasticity of piezoelectric thin film : demonstration on AlN

Arnaud Devos, P. Emery, E. Defay, N. Ben Hassine, G. Parat

We present a technique based on ultrafast acoustics which permits us to measure the electrical dependence of the elastic properties of a thin piezoelectric layer. Ultrafast acoustics offers a unique way of measuring elastic properties of thin-layer in a non-destructive way using ultrashort optical…

Review of Scientific Instruments, 2013, 84, pp.015007-1-4. ⟨10.1063/1.4788936⟩. ⟨hal-00796410⟩

• Article dans une revue

Integrating multiple resistive memory devices on a single carbon nanotube

David Brunel, Costin Anghel, Do-Yoon Kim, Arianna Filoramo, Vincent Derycke, Saïd Tahir, Stéphane Lenfant, Takis Kontos, Dominique Vuillaume, Vincent Jourdain

Nano-objects would be of great interest for the development of new types of electronic circuits if one could combine their nanometer scale with original functionalities beyond the conventional transistor action. However, the associated circuit architectures will have to handle the increasing…

Advanced Functional Materials, 2013, 23 (45), pp.5631-5637. ⟨10.1002/adfm.201300775⟩. ⟨hal-00913582⟩

• Communication dans un congrès

Influence de l'Au nanométrique sur la conductivité des nanofils en Si

M.S. Moldovan, I. Florea, D. Hourlier, O. Ersen

13ème Colloque de la Société Française des Microscopies, SFMu 2013, 2013, Nantes, France. ⟨hal-00878504⟩

• Article dans une revue

Low-temperature crystallization of high performance Pb0.4Sr 0.6TiO3 films compatible with the current silicon-based microelectronic technology

K. Li, Denis Remiens, X.L. Dong, J. Costecalde, N. Sama, T. Li, G. Du, Y. Chen, G.S. Wang

Applied Physics Letters, 2013, 102, 212901, 4 p. ⟨10.1063/1.4807792⟩. ⟨hal-00877663⟩

• Article dans une revue

Hidden surface states at non-polar GaN (101¯0) facets : intrinsic pinning of nanowires

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stiévenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

Applied Physics Letters, 2013, 103, 152101, 4 p. ⟨10.1063/1.4823723⟩. ⟨hal-00877636⟩

• Article dans une revue

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged…

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩

• Autre publication scientifique

Etude de films minces de CuInS2, CuIn1-xGaxS2, et Cu2ZnSnS4, élaborés par voie sol-gel, destinés aux applications photovoltaïques

Yoan Bourlier

2013. ⟨hal-00825116⟩