Publications

• Article dans une revue

Establishment of a derivatization method to quantify thiol function in sulfur-containing plasma polymer films

D. Thiry, R. Francq, D. Cossement, David Guérin, D. Vuillaume, R. Snyders

Langmuir, 2013, 29, pp.13183-13189. ⟨10.1021/la402891t⟩. ⟨hal-00903758⟩

• Article dans une revue

Tight-binding calculations of the optical response of optimally P-doped Si nanocrystals : a model for localized surface plasmon resonance

Xiaodong Pi, C. Delerue

We present tight-binding calculations in the random-phase approximation of the optical response of Silicon nanocrystals (Si NCs) ideally doped with large concentrations of phosphorus (P) atoms. A collective response of P-induced electrons is demonstrated, leading to localized surface plasmon…

Physical Review Letters, 2013, 111, pp.177402. ⟨10.1103/PhysRevLett.111.177402⟩. ⟨hal-00877649⟩

• Article dans une revue

Frequency and angular bandwidth of acousto-optic deflectors with ultrasonic walk-off

Jean-Claude Kastelik, Samuel Dupont, Konstantin B. Yushkov, Joseph Gazalet

Ultrasonics, 2013, 53, pp.219-224. ⟨10.1016/j.ultras.2012.06.003⟩. ⟨hal-00796423⟩

• Proceedings/Recueil des communications

Notes on the historical conceptual streams for mathematics and physics teaching

Raffaele Pisano

Proceedings of the Lithuanian Mathematical Society, Ser. A, Serie A (54), Vilnius university, pp.vii-xvii, 2013, 0132-2818. ⟨hal-04513852⟩

• Article dans une revue

Coupled mode enhanced giant magnetoplasmonics transverse Kerr effect

L. Halagacka, M. Vanwolleghem, K. Postava, B. Dagens, J. Pistora

Optics Express, 2013, 21, pp.21741-21755. ⟨10.1364/OE.21.021741⟩. ⟨hal-00877668⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩

• Autre publication scientifique

Contributions to cooperative diversity in multiple access UWB systems

Yamen Issa

2013. ⟨hal-00912361⟩

• Article dans une revue

Effect of antimony on structure strained quantum well laser

Abdelkader Aissat, Farid Ykhlef, Said Nacer, Jean-Pierre Vilcot

This work consists of highly strained quantum well GaxIn1-xNyAs1-y-zSbz quaternary structure modeling. We have studied the effect nitrogen and antimony incorporation into ternary semiconductor III-V alloys. We found that incorporating nitrogen in the structure leads to a splitting of the conduction…

Journal of Optoelectronics and Advanced Materials, 2013, 15, pp.1185-1187. ⟨hal-00922579⟩

• Communication dans un congrès

Structural transitions in ordered supramolecular networks on a semiconductor surface

Guillaume Copie, Christophe Krzeminski, B. Grandidier, Fabrizio Cleri

We report the experimental and theoretical study of the self-assembly of planar organic molecules of the type tris-X-biphenyl-benzene (with X=N, I, Br, CH) on a passivated, boron-doped Si(111)-√3x√3 (R=30°) surface. Ordered molecular structures are observed by high-resolution STM. We perform multi-…

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium WW : Self-Organization and Nanoscale Pattern Formation, 2013, Boston, MA, United States. ⟨hal-00944025⟩

• Article dans une revue

Search of extremely sensitive near-infrared plasmonic interfaces : a theoretical study

O. Saison-Francioso, Gaëtan Lévêque, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Rabah Boukherroub, Sabine Szunerits

Plasmonics, 2013, 8, pp.1691-1698. ⟨10.1007/s11468-013-9588-9⟩. ⟨hal-00911362⟩