Publications

• COMM

Cavity modes and optomechanic interactions in phoxonic crystals

Said El-Jallal, M. Oudich, Yan Pennec, Bahram Djafari-Rouhani

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944047⟩

• COMM

Terahertz radiation from meta-atom-loaded photoconductive antennas

Keisuke Takano, T. Nishida, Boyoung Kang, H. Sasaki, F. Miyamaru, Mitsuo Wada Takeda, Willie J. Padilla, M. Hangyo, Tahsin Akalin

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811874⟩

• COMM

Sub-THz scalar/vector imaging for objects inspection

Guillaume Ducournau, Y. Kurita, K. Kobayashi, Y. Zapart, Jean-Francois Lampin, T. Otsuji

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811864⟩

• COMM

Piezoresistance and hole mobility in silicon under compressive mechanical stresses of 3 GPa

A.C.H. Rowe, J.S. Milne, S. Arscott

Materials Research Society Spring Meeting, MRS Spring 2013, Symposium A : Film Silicon Science and Technology, 2013, San Francisco, CA, United States. ⟨hal-00811806⟩

• ART

Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET

Mohd F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert, Nicolas Wichmann, Burhanuddin Y. Majlis

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…

PLoS ONE, 2013, 8, e82731, 8 p. ⟨10.1371/journal.pone.0082731⟩. ⟨hal-00922403⟩

• COMM

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

M. Deng, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine, D. Gloria, N. Derrier, P. Chevalier

By taking into account the transistor parasitic lumped elements originated from the contact pads and the metal interconnections including the top-down connection, an enhanced de-embedding procedure for on-wafer G-band measurements has been developed and implemented. This method relies on a…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391. ⟨hal-00922492⟩

• COMM

[Invited] Memristive technologies for neuroinspired applications

F. Alibart

Journées Scientifiques de l'Université de Nantes, Colloque 5 : Non-Volatile Emerging Memories, 2013, Nantes, France. ⟨hal-00823437⟩

• COMM

Pattern classification by memristive crossbar circuits with ex-situ and in-situ training

F. Alibart, E. Zamanidoost, D.B. Strukov

Materials Research Society Spring Meeting, MRS Spring 2013, Symposium DD : Emerging Materials and Devices for Future Nonvolatile Memories, 2013, San Francisco, CA, United States. ⟨hal-00811780⟩

• COMM

Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing

L.G. Gao, F. Merrikh-Bayat, F. Alibart, X.J. Guo, B.D. Hoskins, K.T. Cheng, D.B. Strukov

9th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, 2013, New-York, NY, United States. pp.19-22, ⟨10.1109/NanoArch.2013.6623031⟩. ⟨hal-00909953⟩

• ART

Mixed metallic Ba(Co,Mn)X0.2-xO3-δ (X=F, Cl) hexagonal perovskites

M. Iorgulescu, P. Roussel, N. Tancret, N. Renaut, Nicolas Tiercelin, O. Mentre

Journal of Solid State Chemistry, 2013, 198, pp.210-217. ⟨10.1016/j.jssc.2012.09.040⟩. ⟨hal-00796408⟩