Publications

Affichage de 7731 à 7740 sur 16054


  • COMM

Phononic and photonic properties of a stubbed strip waveguide

Yan Pennec, Bahram Djafari-Rouhani, M. Oudich, Said El-Jallal, J.M. Escalante, Alejandro Martínez, Vincent Laude

IMECE 2012, Nov 2012, Houston, United States. ⟨hal-00759501⟩

  • ART

Confinement of THz surface waves on the subwavelength size metal waveguide

Djamal Gacemi, Juliette Mangeney, Karine Blary, Jean-Francois Lampin, Thibault Laurent, Tahsin Akalin, Paul Crozat, Fanqi Meng

We investigate surface plasmon waves propagating on planar Goubau lines, so-called Goubau modes, using a guided-wave terahertz spectroscopy system based on a freely positionable electrooptic probe. We show the radial nature of the Goubau mode and its confinement around the Goubau line over a few…

Applied physics. A, Materials science & processing, 2012, 109, pp.993-995. ⟨10.1007/s00339-012-7363-y⟩. ⟨hal-00788262⟩

  • COMM

[Invited] Photomixing THz sources : mW level and kHz linewidth

Emilien Peytavit, Guillaume Ducournau, P. Szriftgiser, Denis Bacquet, Alexandre Beck, Tahsin Akalin, Jean-Francois Lampin

European Microwave Week, EuMC/EuMIC, Workshop W05 : Terahertz Technologies - from Devices to Diverse Systems and Applications, Oct 2012, Amsterdam, Netherlands. ⟨hal-00798871⟩

  • PATENT

Planar electronebulization sources modeled on a calligraphy pen and the production thereof

S. Arscott

United States, Patent n° : US8294119B2. 2012. ⟨hal-02345709⟩

  • ART

Gallium nitride based plasmonic multilayer operating at 1.55µm

Arnaud Stolz, Laurence Considine, Salim Faci, El Hadj Dogheche, Charlotte Tripon-Canseliet, Brigitte Loiseau, Dimitri Pavlidis, Didier Decoster, Jean Chazelas

In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semiconductor layers required for this novel structure was conducted accurately…

Optics Letters, 2012, 37 (15), pp.3039 - 3041. ⟨10.1364/OL.37.003039⟩. ⟨hal-00751481⟩

  • PATENT

Amélioration des propriétés de transport dans les transistors HEMT composés de semi-conducteurs borés à larges bande interdite (III-B)-N

A. Ougazzaden, M.A. Poisson, V. Ravindran, A. Soltani, Jean-Claude de Jaeger

N° de brevet: FR2974242 (A1). 2012. ⟨hal-00743478⟩