Publications

Affichage de 7761 à 7770 sur 16175


  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

  • Communication dans un congrès

Doubly coded Costas signals for grating lobes mitigation

Nadjah Touati, Charles Tatkeu, Thierry Chonavel, Atika Rivenq

In this paper, a novel design scheme for radar signal is proposed. It is based on a modification of Costas codes design by increasing the frequency separation of frequency hops beyond the orthogonality condition. Indeed, Costas codes are well known for their good range-doppler properties. Their…

PIMRC 2013 : IEEE 24th International Symposium on Personal Indoor and Mobile RadioPersonal Indoor and Mobile Radio Communications, Sep 2013, Londres, United Kingdom. pp.481-485, ⟨10.1109/PIMRC.2013.6666184⟩. ⟨hal-00946823⟩

  • Communication dans un congrès

A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC

A. Gustafsson, C. Samuelsson, R. Malmqvist, S. Seok, M. Fryziel, N. Rolland, B. Grandchamp, T. Vähä-Heikkilä, R. Baggen

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0- level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC06-2, 432-435. ⟨hal-00922494⟩

  • Communication dans un congrès

High frequency noise characterisation of graphene FET Device

D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, H. Happy

RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., ⟨10.1109/MWSYM.2013.6697561⟩. ⟨hal-00944030⟩

  • Communication dans un congrès

Doped semiconductor nanocrystal junctions studied by Kelvin probe and non-contact atomic force microscopy

Lukasz Borowik, Thuat Nguyen-Tran, D. Deresmes, Heinrich Diesinger, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND~10^20-10^21 cm-3) hydrogen-passivated silicon nanocrystals (NCs) in the 2-50nm size range, using non-contact atomic force microscopy coupled to Kelvin probe…

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States. ⟨hal-00944018⟩

  • Communication dans un congrès

Tunable locally resonant band gaps for surface acoustic waves and Lamb waves in a phononic crystal

N. Gasmi, Abdelkrim Talbi, Y. Du, M. Goueygou, Olivier Bou Matar

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944043⟩