Publications

• Communication dans un congrès

AlGaN/GaN heterostructures with very-thin buffer on Si (111) for NEMS applications : electrical and mechanical study

P. Leclaire, Y. Cordier, Sébastien Chenot, D. Theron, M. Faucher

22nd European Workshop on Heterostructure Technology, HeTech 2013, 2013, Glasgow, Scotland, United Kingdom. 2 p. ⟨hal-00877763⟩

• Communication dans un congrès

Amplificateur de puissance GaN à haut rendement avec polarisation dynamique

F. Gamand, M.D. Li, Christophe Gaquière

18èmes Journées Nationales Microondes, JNM 2013, 2013, Paris, France. papier J1-DA2-2, 4 p. ⟨hal-00878391⟩

• Communication dans un congrès

A compact communication component for the 3G mobile networks

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 325, 1-4. ⟨hal-00804744⟩

• Communication dans un congrès

[Invité]Tapis d'invisibilité à base de cristaux photoniques : manipulation de fronts d'onde en infrarouge

O. Vanbesien

Colloque National Métamatériaux, CNM 2013, 2013, Orsay, France. ⟨hal-00878494⟩

• Communication dans un congrès

Stress and temperature dependent properties of single crystal piezoelectric materials and devices

R. Meyer, D. Markley, Z. Lowe, N. Sherlock, P. Mosbah

3rd Joint IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2013, Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials Workshop, PFM 2013, 2013, Prague, Czech Republic. ⟨hal-00955676⟩

• Communication dans un congrès

200 GHz communication system using unipolar InAs THz rectifiers

Guillaume Ducournau, A. Westlund, P. Sangare, Christophe Gaquière, P.A. Nislon, L. Desplanque, J.L. Codron, X. Wallart, I. Iniguez de La Torre, J.F. Millithaler, T. Gonzales, J. Mateos, J. Grahn

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, 2013, Mainz, Germany. paper MO11-3, 2 p., ⟨10.1109/IRMMW-THz.2013.6665492⟩. ⟨hal-00914236⟩

• Communication dans un congrès

A 3.8 GHz tunable filter based on ferroelectric interdigitated capacitors

Areski Ghalem, Freddy Ponchel, Denis Remiens, Tuami Lasri

In this paper, a tunable filter using ferroelectric capacitor is described. The interdigitated capacitor (IDC) is based on Barium Strontium Titanate (BST) thin-film. After the material and capacitor characterization in microwave frequency domain, the IDC has been introduced in a hairpin filter. The…

3rd Joint IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2013, Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials Workshop, PFM 2013, 2013, Prague, Czech Republic. paper ISAF4-M3-3, 252-256, ⟨10.1109/ISAF.2013.6748746⟩. ⟨hal-00955674⟩

• Communication dans un congrès

Caractérisation structurale et magnétique de couches minces FePt pour polarisation de nanostructures magnétostrictives

E. Folcke, Y. Rizki, Yannick Dusch, C. Dufour, H. Rothard, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky, J.M. Le Breton, J. Juraszek

XVe Colloque Louis Néel, Couches Minces et Nanostructures Magnétiques, 2013, Tours, France. papier MMCS-32, 292-293. ⟨hal-00878384⟩

• Article dans une revue

Ferromagnetism induced in ZnO nanorods by morphology changes under a nitrogen–carbon atmosphere

Brigitte Sieber, Jarno Salonen, Ermei Makila, Mikko Tenho, Markku Heinonen, Hannu Huhtinen, Petriina Paturi, Edwin Kukk, Guillaume Perry, Ahmed Addad, Myriam Moreau, Luc Boussekey, Rabah Boukherroub

RSC Advances, 2013, 3 (31), pp.12945. ⟨10.1039/c3ra41008k⟩. ⟨hal-02388422⟩

• Article dans une revue

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind, Per-Åk Nilsson, L. Desplanque, Xavier Wallart, Jan Grahn

A new method for avoiding air exposure of the mesa-floor during processing of shallow-mesa InAs/AlSb HEMTs is reported. The method is based on the in situ chemical vapor deposition (CVD) of a SiNx-film, right after the shallow-mesa dry-etch process. The in situ CVD method allows also growing a…

Solid-State Electronics, 2013, 87, pp.85-89. ⟨10.1016/j.sse.2013.06.008⟩. ⟨hal-00871902⟩