Publications

• Communication dans un congrès

Métamatériaux fishnet aux longueurs d'ondes submillimétriques

Frédéric Garet, S. Wang, M. Astic, Eric Lheurette, Karine Blary, Jean-Louis Coutaz, Didier Lippens

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S4, papier ID8, 1-4. ⟨hal-00806595⟩

• Communication dans un congrès

An adaptive video pre-processor based on just-noticeable distortion

E. Vidal, T. Hauser, Patrick Corlay, François-Xavier Coudoux

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 53, 200-203. ⟨hal-00802524⟩

• Communication dans un congrès

Prototyping of an insect-like nano aerial vehicle

A. Bontemps, T. Vanneste, J.B. Paquet, Sébastien Grondel, Eric Cattan

Journées Nationales du GDR Micro Nano Systèmes-Micro Nano Fluidique, 2012, Bordeaux, France. ⟨hal-00798851⟩

• Article dans une revue

Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes

A. Khatab, M. Shafi, R.H. Mari, M. Aziz, M. Henini, G. Patriarche, David Troadec, M. Sadeghi, S. Wang

Physica Status Solidi C: Current Topics in Solid State Physics, 2012, 9, pp.1621-1623. ⟨10.1002/pssc.201100581⟩. ⟨hal-00790437⟩

• Article dans une revue

Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

Etienne Herth, Emmanuelle Algre, Pascal Tilmant, Martin François, Christophe Boyaval, Bernard Legrand

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is…

IEEE Transactions on Nanotechnology, 2012, 11 (4), pp.854-859. ⟨10.1109/TNANO.2012.2196802⟩. ⟨hal-00787415⟩

• Communication dans un congrès

Ultrafast transient absorption spectroscopy of HgTe quantum dots

Ali Al-Otaify, David J. Binks, Stephen V. Kershaw, Guy Allan, Christophe Delerue

Optics & Photonics joint with Quantum Electronics & Photonics, Photon 12/QEP-20, 2012, Durham, United Kingdom. ⟨hal-00798255⟩

• Article dans une revue

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this paper, we report static electric drain-source current-voltage measurements for different gate voltages and at different temperatures, performed on Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors (HEMT). The results show the presence of kink and collapse effects. We have…

Journal of Applied Physics, 2012, 111 (7), pp.073713. ⟨10.1063/1.3702458⟩. ⟨hal-00787870⟩

• Communication dans un congrès

Synthesis and characterization of vertically oriented ZnO nanowires grown on c-axis ZnO seed layer by pulsed laser deposition

Basma El Zein, Y. Yao, S. Boulfrad, El Hadj Dogheche, Didier Decoster, G.E. Jabbour

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium Y : Advanced materials and characterization techniques for solar cells, 2012, Strasbourg, France. ⟨hal-00797741⟩

• Communication dans un congrès

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

Elodie Canderle, Pascal Chevalier, A. Montagne, L. Moynet, Gregory Avenier, Pierre Boulenc, M. Buczko, Y. Carminati, J. Rosa, Christophe Gaquière, Alain Chantre

The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The objective of this annealing is to reduce the extrinsic base resistance R Bx which in previous studies appeared to limit f MAX of DPSA-SEG SiGe HBTs…

26th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012, Sep 2012, Portland, OR, United States. pp.1-4, ⟨10.1109/BCTM.2012.6352650⟩. ⟨hal-00801192⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩