Publications

• Article dans une revue

THz surface plasmon modes on planar Goubau lines

Djamal Gacemi, Juliette Mangeney, Thibault Laurent, Jean-Francois Lampin, Tahsin Akalin, Karine Blary, Aloyse Degiron, Paul Crozat, Fanqi Meng

The dispersion relation and confinement of terahertz surface plasmon modes propagating along planar Goubau lines are studied using guided-wave time domain spectroscopy. We demonstrate the radial nature of the surface plasmon mode known as the Goubau mode and the transverse confinement of the…

Optics Express, 2012, 20 (8), pp.8466-8471. ⟨10.1364/OE.20.008466⟩. ⟨hal-00790374⟩

• Communication dans un congrès

Graphene layers grown by RTP-CVD on nickel and their properties

H. Kim, E. Pichonat, D. Vignaud, D. Pavlidis, H. Happy

11th Expert Meeting on Evaluation and Control of Coumpound Semiconductor Materials & Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801046⟩

• Article dans une revue

Elasticity of flexible and semiflexible polymers with extensible bonds in the Gibbs and Helmholtz ensembles

F. Manca, S. Giordano, Pier Luca Palla, R. Zucca, F. Cleri, L. Colombo

The Journal of Chemical Physics, 2012, 136, pp.154906-1-10. ⟨10.1063/1.4704607⟩. ⟨hal-00787357⟩

• Article dans une revue

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart

Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩

• Article dans une revue

Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

EPL - Europhysics Letters, 2012, 97, pp.68011-1-6. ⟨10.1209/0295-5075/97/68011⟩. ⟨hal-00786985⟩

• Article dans une revue

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the…

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩

• Article dans une revue

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

• Article dans une revue

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩

• Communication dans un congrès

RF operation of InAs quantum hot electron transistors

H. Nguyen Van, A. N. Baranov, M. Zaknoune, R. Teissier

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801051⟩

• Communication dans un congrès

InAs hot electron transistors with cutoff frequency above 200 GHz

H. Nguyen Van, A. N. Baranov, R. Teissier, M. Zaknoune

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797314⟩