Publications

• Article dans une revue

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Paul Sangare, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, Christophe Gaquière, Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Jean-Francois Millithaler, Javier Mateos, Tomás González

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both…

Journal of Applied Physics, 2013, 113 (3), pp.034305. ⟨10.1063/1.4775406⟩. ⟨hal-00796434⟩

• Article dans une revue

Revisited RF compact model of gate resistance suitable for high-K/metal gate technology

B. Dormieu, P. Scheer, C. Charbuillet, H. Jaouen, Francois Danneville

IEEE Transactions on Electron Devices, 2013, 60, pp.13-19. ⟨10.1109/TED.2012.2225146⟩. ⟨hal-00795950⟩

• Article dans une revue

A fully distributed non linear waveguide using (Pb,Sr)TiO3 thin film : second and third harmonics generation

Freddy Ponchel, Ludovic Burgnies, D. Ducatteau, Eric Lheurette, Denis Remiens, D. Lippens

We report on the experimental investigation of a non-linear (NL) Co-Planar Waveguide (CPW) fabricated by means of a ferroelectric film. In contrast to conventional NL-CPW, periodically loaded by lumped varactors, the tunable ferroelectric material is fully distributed along the propagation…

Journal of Applied Physics, 2013, 114 (19), pp.194103. ⟨10.1063/1.4831660⟩. ⟨hal-00906041⟩

• Article dans une revue

Shift and torsion contact problems for arbitrary axisymmetric normal stress distributions

Grey Sh Boltachev, Vladislav Aleshin

In this paper, we analyze the contact interaction of axisymmetric particles subject to a subsequent application of a constant normal load and a tangential or rotational force. A rigorous solution to the frictional contact problem is given by the known Jäger theorem that presents a relationship…

International Journal of Solids and Structures, 2013, 50, pp.2894-2900. ⟨10.1016/j.ijsolstr.2013.05.004⟩. ⟨hal-00871907⟩

• Article dans une revue

Analytical procedure for determining the linear and nonlinear effective properties of the elastic composite cylinder

S. Giordano

International Journal of Solids and Structures, 2013, 50, pp.4055-4069. ⟨10.1016/j.ijsolstr.2013.08.017⟩. ⟨hal-00871911⟩

• Article dans une revue

Broadband ultra-low-loss mesh filters on flexible cyclic olefin copolymer films for terahertz applications

F. Pavanello, F. Garet, M.B. Kuppam, Emilien Peytavit, M. Vanwolleghem, Francois Vaurette, J.L. Coutaz, Jean-Francois Lampin

Applied Physics Letters, 2013, 102, pp.111114-1-4. ⟨10.1063/1.4798522⟩. ⟨hal-00814965⟩

• Article dans une revue

An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

Thomas Dargent, Kamel Haddadi, T. Lasri, N. Clément, D. Ducatteau, Bernard Legrand, H. Tanbakuchi, Didier Theron

We report on an adjustable interferometric set-up for Scanning Microwave Microscopy. This interferometer is designed in order to combine simplicity, a relatively flexible choice of the frequency of interference used for measurements as well as the choice of impedances range where the interference…

Review of Scientific Instruments, 2013, 84 (12), pp.123705. ⟨10.1063/1.4848995⟩. ⟨hal-00922585⟩

• Communication dans un congrès

Technique interférométrique pour la caractérisation diélectrique en milieu liquide par ligne coaxiale ouverte

H. Balki, M. Moutaoukil, Kamel Haddadi, T. Lasri

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Maroc. papier 266, 1-4. ⟨hal-00804745⟩

• Communication dans un congrès

Performance analysis of OCDMA systems with 2-D optical codes in MMF channels

H. Mrabet, Iyad Dayoub, R. Attia

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 252, 1-4. ⟨hal-00804740⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩