Publications

• Article dans une revue

Top electrode size effect on hysteresis loops in piezoresponse force microscopy of Pb(Zr,Ti)O3-film on silicon structures

S.L. Bravina, N.V. Morozovsky, E.A. Eliseev, A.N. Morozovska, J. Costecalde, Caroline Soyer, Denis Remiens, D. Deresmes

• Communication dans un congrès

Increased performances for ODH of propane on metal foam supported VOx/TiO2 catalytic systems

A. Lofberg, A. Essakhi, S. Paul, P. Supiot, B. Mutel, E. Bordes-Richard

12th International Conference on Microreaction Technology, IMRET 12, 2012, Lyon, France. ⟨hal-00798845⟩

• Communication dans un congrès

Fabrication of La2Ti2O7 nanostructures by focused Ga3+ ion beam and characterization by piezoresponse force microscopy

G. Declercq, A. Ferri, Z. Shao, A. Bayart, S. Saitzek, R. Desfeux, D. Deresmes, David Troadec, J. Costecalde, Denis Remiens

Joint 21th International Symposium on Applications of Ferroelectrics, ISAF 2012, 11st European Conference on the Applications of Polar Dielectrics, ECAPD 2012, 4th International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in P, 2012, Aveiro, Portugal. pp.1-3, ⟨10.1109/ISAF.2012.6297772⟩. ⟨hal-00801125⟩

• Article dans une revue

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩

• Article dans une revue

Hertz-Mindlin problem for arbitrary oblique 2D loading : general solution by memory diagrams

Vladislav Aleshin, Koen van den Abeele

In this paper we present a new general solution to the fundamental problem of frictional contact of two elastic spheres, also known as the Hertz–Mindlin (HM) problem. The description of spheres in contact is a central topic in contact mechanics. It became a foundation of many applications, such as…

Journal of the Mechanics and Physics of Solids, 2012, 60 (1), pp.14-36. ⟨10.1016/j.jmps.2011.10.003⟩. ⟨hal-00639830⟩

• Communication dans un congrès

Indoor radio channel characterization at 60 GHz

Maríateresa Martínez Inglés, Juan Pascual García, José Víctor Rodríguez, José María Molina García-Pardo, Leandro Juan Llácer, Davy Gaillot, M. Lienard, Pierre Degauque

This TD presents a set of 10x10 MIMO measurements at 60GHz in an indoor environment. A theoretical and experimental analysis has been done by means of a 3D ray tracing tool and the high resolution parameter estimator RiMAX. Results show the complexity of modeling the radio channel at the mmW…

5th COST IC1004 Management Committee and Scientific Meeting, 2012, Bristol, United Kingdom. ⟨hal-00961446⟩

• Article dans une revue

High-performance modulation-doped heterostructure-thermopiles for uncooled infrared image-sensor application

M. Abe, N. Kogushi, K.S. Ang, R. Hofstetter, K. Manoj, L.N. Retnam, H. Wang, G.I. Ng, C. Jin, D. Pavlidis

IEICE Transactions on Electronics, 2012, E95-C, pp.1354-1362. ⟨10.1587/transele.E95.C.1354⟩. ⟨hal-00790416⟩

• Communication dans un congrès

Millimeter wave elastomeric antennas

S. Hage-Ali, Y. Orlic, Nicolas Tiercelin, Ronan Sauleau, Philippe Pernod, Vladimir Preobrazhensky, Philippe Coquet

Advanced Electromagnetics Symposium, AES 2012, Apr 2012, Paris, France. ⟨hal-00772979⟩

• Article dans une revue

Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz

F Medjdoub, Yoann Tagro, Malek Zegaoui, B. Grimbert, Francois Danneville, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency…

IEEE Electron Device Letters, 2012, 33 (9), pp.1258-1260. ⟨10.1109/LED.2012.2205215⟩. ⟨hal-00786956⟩

• Article dans une revue

Planar InAs/AlSb HEMTs with ion-implanted isolation

G. Moschetti, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

IEEE Electron Device Letters, 2012, 33, pp.510-512. ⟨10.1109/LED.2012.2185480⟩. ⟨hal-00787019⟩