Publications

Affichage de 8171 à 8180 sur 16133


  • Communication dans un congrès

Tunability of one-dimensional piezoelectric or piezomagnetic phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham-Thi

Anglo French Physical Acoustics Conference, AFPAC2012, 2012, Brighton, United Kingdom. ⟨hal-00797220⟩

  • Article dans une revue

DC and high-frequency characteristics of GaN Schottky varactors for frequency multiplication

C. Jin, D. Pavlidis, L. Considine

IEICE Transactions on Electronics, 2012, E95-C, pp.1348-1353. ⟨10.1587/transele.E95.C.1348⟩. ⟨hal-00790415⟩

  • Communication dans un congrès

Les technologies hautes fréquences émergentes

H. Happy

Salon RF Hyper & Wireless, 2012, Paris, France. ⟨hal-00797366⟩

  • Communication dans un congrès

Micro-résonateurs haute fréquence pour la microscopie à force atomique

B. Walter, M. Faucher, E. Mairiaux, Z. Xiong, L. Buchaillot, Bernard Legrand

15ème Forum des Microscopies à Sonde Locale, 2012, Saint-Jacut-de-la-Mer, France. ⟨hal-00797718⟩

  • Communication dans un congrès

[Invited] Can we achieve high power GaN-on-Si in the mmW range ?

F Medjdoub

48th Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2012, 2012, Napa Valley, CA, United States. ⟨hal-00797332⟩

  • Communication dans un congrès

Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN

L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium D : Nanocontacts - Emerging Materials and Processing for Ohmicity and Rectification, 2012, San Francisco, CA, United States. ⟨hal-00798221⟩

  • Communication dans un congrès

Influence of antimony on III-V nanowires grown by MBE

P. Caroff, S. Conesa-Boj, Y. Makoudi, B. Grandidier, A. Fontcuberta I Morral, X. Wallart

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797348⟩

  • Communication dans un congrès

Conductance statistics from a large array of sub-10 nm molecular junctions

K. Smaali, N. Clement, G. Patriarche, D. Vuillaume

International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00797676⟩

  • Communication dans un congrès

High electron mobility InAs-based heterostructure on exact (001) Si using GaSb/GaP accommodation layer

L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797346⟩