Publications
Affichage de 8171 à 8180 sur 16133
Tunability of one-dimensional piezoelectric or piezomagnetic phononic crystals
S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham-Thi
Anglo French Physical Acoustics Conference, AFPAC2012, 2012, Brighton, United Kingdom. ⟨hal-00797220⟩
DC and high-frequency characteristics of GaN Schottky varactors for frequency multiplication
C. Jin, D. Pavlidis, L. Considine
IEICE Transactions on Electronics, 2012, E95-C, pp.1348-1353. ⟨10.1587/transele.E95.C.1348⟩. ⟨hal-00790415⟩
Modelling and simulation of high-frequency (100 MHz) ultrasonic linear arrays based on single crystal LiNbO3
Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, S. Queste, Y.P. Huang
Ultrasonics, 2012, 52, pp.47-53. ⟨10.1016/j.ultras.2011.06.009⟩. ⟨hal-00790365⟩
Les technologies hautes fréquences émergentes
H. Happy
Salon RF Hyper & Wireless, 2012, Paris, France. ⟨hal-00797366⟩
Micro-résonateurs haute fréquence pour la microscopie à force atomique
B. Walter, M. Faucher, E. Mairiaux, Z. Xiong, L. Buchaillot, Bernard Legrand
15ème Forum des Microscopies à Sonde Locale, 2012, Saint-Jacut-de-la-Mer, France. ⟨hal-00797718⟩
[Invited] Can we achieve high power GaN-on-Si in the mmW range ?
F Medjdoub
48th Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2012, 2012, Napa Valley, CA, United States. ⟨hal-00797332⟩
Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN
L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane
Materials Research Society Spring Meeting, MRS Spring 2012, Symposium D : Nanocontacts - Emerging Materials and Processing for Ohmicity and Rectification, 2012, San Francisco, CA, United States. ⟨hal-00798221⟩
Influence of antimony on III-V nanowires grown by MBE
P. Caroff, S. Conesa-Boj, Y. Makoudi, B. Grandidier, A. Fontcuberta I Morral, X. Wallart
6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797348⟩
Conductance statistics from a large array of sub-10 nm molecular junctions
K. Smaali, N. Clement, G. Patriarche, D. Vuillaume
International Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France. ⟨hal-00797676⟩
High electron mobility InAs-based heterostructure on exact (001) Si using GaSb/GaP accommodation layer
L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797346⟩