Publications

Affichage de 8981 à 8990 sur 16133


  • Communication dans un congrès

Laboratoire sur puce pour la métrologie des liquides : l'exemple de l'hydratation des alcools

Simon Laurette, A. Treizebre, Basak Hatirnaz, Ludovic Duponchel, Frederic Affouard, Bertrand Bocquet

Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807638⟩

  • Communication dans un congrès

Design of electronic conducting polymer based microactuators by microsystem process

Ali Maziz, Cedric Plesse, Alexandre Khaldi, Caroline Soyer, C. Chevrot, D. Teyssie, Eric Cattan, F. Vidal

6th World Congress on Biomimetics, Artificial Muscles and Nano-Bio, 2011, Cergy-Pontoise, France. ⟨hal-00807674⟩

  • Article dans une revue

Design, realization, and test of a 2.1-GHz low-phase-noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

Microwave and Optical Technology Letters, 2011, 53, pp.405-409. ⟨10.1002/mop.25690⟩. ⟨hal-00572638⟩

  • Article dans une revue

Erbium silicide growth in the presence of residual oxygen

N. Reckinger, Xing Tang, S. Godey, Emmanuel Dubois, A. Laszcz, J. Ratajczak, Adriana Vlad, C.A. Dutu, J.P. Raskin

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its…

Journal of The Electrochemical Society, 2011, 158, pp.H715-H723. ⟨10.1149/1.3585777⟩. ⟨hal-00597075v2⟩

  • Article dans une revue

Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩

  • Article dans une revue

Identification and localization of electronic traps in AlGaN/GaN HEMTs on Al2O3 substrates using CDLTS

O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2380-2383. ⟨10.1166/sl.2011.1786⟩. ⟨hal-00795919⟩

  • Communication dans un congrès

Properties of GaN and InN films in terahertz range

A. Gauthier-Brun, J.H. Teng, W. Liu, M. Tonouchi, El Hadj Dogheche, A. Gokarna, S.J. Chua, Didier Decoster

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800062⟩

  • Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin silicon membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor-Torres

7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2011, 2011, Granada, Spain. pp.125-126. ⟨hal-00800088⟩