Publications

• Article dans une revue

Band gaps and waveguiding in phoxonic silicon crystal slabs

Yan Pennec, Bahram Djafari-Rouhani, E.H. El Boudouti, C. Li, Y. El Hassouani, Jerome O. Vasseur, N. Papanikolaou, S. Benchabane, V. Laude, A. Martinez

Chinese Journal of Physics, 2011, 49, pp.100-110. ⟨hal-00579069⟩

• Communication dans un congrès

Frictional contact of two spheres for arbitrary 2D loading : memory diagrams and Preisach analysis

Vladislav Aleshin, Koen van den Abeele

XVI International Conference on Nonlinear Elasticity in Materials, ICNEM 2011, 2011, Prague, Czech Republic. pp.045004-1-11, ⟨10.1121/1.3670734⟩. ⟨hal-00819453⟩

• Article dans une revue

Complex permittivity measurement for dielectric materials at microwave frequencies using rectangular waveguide

M.D. Belrhiti, S. Bri, A. Nakheli, M. Haddad, A. Mamouni

European Journal of Scientific Research, 2011, 49, pp.234-248. ⟨hal-00572656⟩

• Article dans une revue

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1…

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Functionalization of silicon nanowires for specific sensing

V. Passi, Emmanuel Dubois, C. Celle, S. Clavaguera, J.P. Simonato, J.P. Raskin

Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change of the Si NWs equivalent conductance. The use of the output conductance of…

ECS Transactions, 2011, 35, pp.313-318. ⟨10.1149/1.3570811⟩. ⟨hal-00591351⟩

• Article dans une revue

Realization of ultra dense arrays of vertical silicon NWs with defect free surface and perfect anisotropy using a top-down approach

X.L. Han, G. Larrieu, Pier-Francesco Fazzini, Emmanuel Dubois

Microelectronic Engineering, 2011, 88, pp.2622-2624. ⟨10.1016/j.mee.2010.12.102⟩. ⟨hal-00795901⟩

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were…

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the…

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩

• Article dans une revue

Field-induced vortices in weakly anisotropic ferroelectrics

Anaïs Sené, Laurent Baudry, Igor A. Luk'Yanchuk, Laurent Delahoche, Y. El Amraoui

Superlattices and Microstructures, 2011, 49, pp.314-317. ⟨10.1016/j.spmi.2010.05.001⟩. ⟨hal-00574497⟩