Publications

• Article dans une revue

Magnonic circuits and crystals

Housni Al-Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski

In the frame of the long-wavelength Heisenberg model, a simple magnonic mono-mode circuit is designed to obtain transmission stop (pass) bands where the propagation of spin waves is forbidden (allowed). This simple device is composed of an infinite one-dimensional monomode waveguide (the backbone)…

Surface Science Reports, 2011, 66, pp.29-75. ⟨10.1016/j.surfrep.2010.10.002⟩. ⟨hal-00572644⟩

• Article dans une revue

One port contour-mode ZnO piezoelectric MEMS resonator

Tadeusz Gryba, Julien Carlier, S.X. Wang, X.Z. Zhao, S. Guo, Jean-Etienne Lefebvre

This paper reports on design, fabrication and experimental testing of one port ZnO contour-mode resonant MEMS. The devices are fabricated from silicon wafers using a 4-mask process. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the fabrication…

Microelectronic Engineering, 2011, 88, pp.3003-3010. ⟨10.1016/j.mee.2011.04.062⟩. ⟨hal-00639933⟩

• Article dans une revue

Unprecedented robust antiferromagnetism in fluorinated hexagonal perovskites

M. Sturza, H. Kabbour, S. Daviero-Minaud, D. Filimonov, K. Pokholok, Nicolas Tiercelin, F. Porcher, L. Aldon, O. Mentre

Journal of the American Chemical Society, 2011, 133, pp.10901-10909. ⟨10.1021/ja2028603⟩. ⟨hal-00639870⟩

• Article dans une revue

Development of interdigital transducer sensors for non-destructive characterization of thin films using high frequency Rayleigh waves

J. Deboucq, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Julien Carlier, Mohamed Ourak

In this paper, Rayleigh waves were generated and studied over a broad frequency range (5–50 MHz) and from the dispersion phenomenon, two substrate on layer type-samples with thin layer thicknesses of 1 μm and 500 nm, respectively, were characterized. The originality in this paper is the use of…

Review of Scientific Instruments, 2011, 82, pp.064905-1-7. ⟨10.1063/1.3600797⟩. ⟨hal-00639936⟩

• Communication dans un congrès

Développement d'un banc de caractérisation non linéaire dans le domaine fréquentiel pour la caractérisation et la modélisation de transistors de puissance

R. Ouhachi, A. Pottrain, T. Lacave, D. Ducatteau, P. Chevalier, D. Gloria, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 118, 2F6, 1-4. ⟨hal-00603134⟩

• Communication dans un congrès

Caractérisation et analyse des effets de pièges électriques sur la fiabilité de HEMTS AlGaN/GaN

F. Berthet, Y. Guhel, H. Galous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.4C3, 1-4. ⟨hal-00603136⟩

• Communication dans un congrès

Amélioration des performances électriques en régime statique et hyperfréquence de transistors HEMTs pseudomorphiques de la filière GaAs en utilisant des rayonnements ionisants

F. Berthet, Y. Guhel, H. Galous, B. Boudart, J.L. Trolet, M. Piccione, N. Vellas, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.6E9, 1-4. ⟨hal-00603138⟩

• Communication dans un congrès

Influence du retournement temporel sur la localisation au sein d'un réseau ad hoc

Michael Bocquet, Christophe Loyez, M. Friziel, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 51, 6F3, 1-4. ⟨hal-00603135⟩

• Article dans une revue

Artificial magnetic properties of dielectric metamaterials in terms of effective circuit model

L.Y. Liu, J.B. Sun, X.J. Fu, J. Zhou, Q. Zhao, B. Fu, J.P. Liao, D. Lippens

Progress In Electromagnetics Research, 2011, 116, pp.159-170. ⟨10.2528/PIER11033004⟩. ⟨hal-00603007⟩

• Article dans une revue

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

An evaluation of the gate capacitance of a fieldeffect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report…

IEEE Transactions on Nanotechnology, 2011, 10 (5), pp.1172-1179. ⟨10.1109/TNANO.2011.2123913⟩. ⟨hal-00639857⟩