Publications

• ART

Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires

Wenxing Zhang, Christophe Delerue, Yann-Michel Niquet, Guy Allan, Enge Wang

Using a sp3d5s∗ tight-binding model for electrons and a valence force-field model for phonons, we study the transport properties of [110]-oriented silicon nanowires including all electron-phonon interactions. Using a full resolution of the Boltzmann transport equation, the low-field mobility is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.115319-1-7. ⟨10.1103/PhysRevB.82.115319⟩. ⟨hal-00549040⟩

• ART

New magnetic micro-actuator design based on PDMS elastomer and MEMS technologies for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

IEEE Transactions on Haptics (ToH), 2010, 3, pp.88-97. ⟨10.1109/TOH.2009.61⟩. ⟨hal-00548961⟩

• ART

Coulomb energy determination of a single Si dangling bond

T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert

Physical Review Letters, 2010, 105, pp.226404-1-4. ⟨10.1103/PhysRevLett.105.226404⟩. ⟨hal-00549059⟩

• COMM

Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs

O. Fathallah, M. Gassoumi, S. Saadaoui, B. Grimbert, Christophe Gaquière, H. Maaref

27th International Conference on Microelectronics, MIEL 2010, 2010, pp.479-481, ⟨10.1109/MIEL.2010.5490440⟩. ⟨hal-00550032⟩

• COMM

Optimization of chaotic cavity transducers to nonlinear elastic imaging

Olivier Bou Matar, Steven Delrue, Koen van den Abeele

Recent results have shown that Nonlinear Elastic Wave Spectroscopy (NEWS) and Time Reversal (TR) techniques can be combined to precisely localize defects, produced by their nonlinear response. NEWS techniques can be used either as a post-treatment of TR used as a tool for ultrasound focusing in…

10ème Congrès Français d'Acoustique, Apr 2010, Lyon, France. ⟨hal-00551140⟩

• COMM

A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon

N. Meng, J. Ferrer-Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.294-297. ⟨hal-00549928⟩

• COMM

Multichannel THz imaging using arrays of photoconductive antennas

S. Wohnsiedler, M. Kolano, J. Klier, M. Herrmann, J. Jonuscheit, R. Beigang, Emilien Peytavit, Jean-Francois Lampin

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612546⟩. ⟨hal-00549947⟩

• COMM

CW THz generation by In0.53Ga0.47As photomixer with TEM-horn antenna driven at 1.55 µm wavelengths

Juliette Mangeney, F. Meng, Djamal Gacemi, Emilien Peytavit, Jean-Francois Lampin, Tahsin Akalin

We report the continuous wave generation delivered by on ion-irradiated In 0.53 Ga 0.47 As photomixers coupled to transverse-electromagnetic-horn antenna using two lasers operating at ~1.55 μm wavelength. Output powers up to 0.1 μW at 700 GHz have been achieved. The output power in a regime of…

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612586⟩. ⟨hal-00549952⟩

• COMM

Synthesis and characterization of crystalline silicon ribbons on insulator using catalytic Vapor-Liquid-Solid growth inside a cavity

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki, D. Delille, C. Maurice, David Troadec

6th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EUROSOI 2010, 2010, France. pp.99-100. ⟨hal-00549974⟩

• COMM

Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Albert M.D. Noudeviwa, Yannick Roelens, Francois Danneville, Aurélien Olivier, Nicolas Wichmann, Nicolas Waldhoff, Sylvie Lepilliet, Gilles Dambrine, L. Desplanque, X. Wallart, Joseph Bellaiche, Derek Smith, Hassan Maher, S. Bollaert

We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease…

5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289. ⟨hal-00549927⟩