Publications

Affichage de 9881 à 9890 sur 16173


  • Communication dans un congrès

Graphene growth by molecular beam epitaxy on SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, W. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene International School, 2010, Cargèse, France. ⟨hal-00573662⟩

  • Article dans une revue

Four-port communication receiver with digital IQ-regeneration

Kamel Haddadi, M.M. Wang, Christophe Loyez, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2010, 20, pp.58-60. ⟨10.1109/LMWC.2009.2035969⟩. ⟨hal-00549489⟩

  • Communication dans un congrès

Statistical analysis of European accelerogram parameters: a contribution to observational hazard in Europe

C.S. Oliveira, G. Gassol, T. Susagna, X. Goula, C. Papaioannou, P. Gueguen, J. Clinton, C. Zulfikar, S. Godey

Not available

14th European Conference on Earthquake Engineering, Aug 2010, Ohrid, Macedonia. pp.Not available. ⟨insu-00568224⟩

  • Article dans une revue

Laser generated guided waves and finite element modeling for the thickness gauging of thin layers

F. Lefevre, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Review of Scientific Instruments, 2010, 81, pp.034901-1-5. ⟨10.1063/1.3317734⟩. ⟨hal-00549540⟩

  • Communication dans un congrès

Baseband Fading Channel Simulator for Inter-Vehicle Communication using SystemC-AMS

Abdelbasset Massouri, Antoine Lévêque, Laurent Clavier, Michel Vasilevski, Andreas Kaiser, Marie-Minerve Louerat

System level modeling and simulation have become a key issue in analyzing, optimizing and designing wireless systems. In this paper, modeling RF front end devices and radio propaga- tion channel especially fading time-variant channel for Inter- Vehicle Communication using SystemC-AMS are…

2010 IEEE International Behavioral Modeling and Simulation Conference (BMAS 2010), Sep 2010, San Jose, CA, United States. pp.36-41. ⟨hal-00632156⟩

  • Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Nina Diakonova, A. El Fatimy, Y. Meziani, T. Otsuji, Dominique Coquillat, Wojciech Knap, Frederic Teppe, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M. A. Poisson, S. Delage

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

35th International Conference on Infrared, Millimeter and Terahertz Waves, Sep 2010, Rome, Italy. pp.1. ⟨hal-00636136⟩

  • Article dans une revue

Gigahertz characterization of a single carbon nanotube

L. Nougaret, Gilles Dambrine, Sylvie Lepilliet, H. Happy, N. Chimot, Vincent Derycke, J.P. Bourgoin

Applied Physics Letters, 2010, 96, pp.042109-1-3. ⟨10.1063/1.3284513⟩. ⟨hal-00548562⟩

  • Article dans une revue

Fracture toughness, hardness, and Young's modulus of tantalum nanocrystalline films

G. Guisbiers, E. Herth, L. Buchaillot, T. Pardoen

Applied Physics Letters, 2010, 97, pp.143115-1-3. ⟨10.1063/1.3496000⟩. ⟨hal-00548997⟩