Publications

Affichage de 201 à 210 sur 15030


  • Communication dans un congrès

Devices and circuits for HF applications based on 2D materials

Simon Skrzypczak, Di Zhou, Wei Wei, Dalal Fadil, Dominique Vignaud, Emiliano Pallecchi, Henri Happy

Graphene and related 2D materials have been extensively studied in recent years. As a result, numerous components have been developed for a wide range of applications in high frequency electronics and telecommunications. These include graphene field effect transistors (GFET) which can be used to…

2023 38th Conference on Design of Circuits and Integrated Systems (DCIS), Nov 2023, Málaga, Spain. pp.1-5, ⟨10.1109/DCIS58620.2023.10335977⟩. ⟨hal-04396932⟩

  • Article dans une revue

Acoustic noise levels and field distribution in 7 T MRI scanners

Louena Shtrepi, Vinicius Poggetto, Clement Durochat, Marc Dubois, David Bendahan, Fabio Nistri, Marco Miniaci, Nicola Maria Pugno, Federico Bosia

Acoustic noise production during Magnetic Resonance Imaging is an important source of patient discomfort and leads to verbal communication problems, difficulties in sedation, and hearing impairment. To address these issues, in this paper we present a systematic characterization of the acoustic…

Frontiers in Physics, 2023, 11, ⟨10.3389/fphy.2023.1284659⟩. ⟨hal-04302825⟩

  • Article dans une revue

Phyllosilicates with embedded Fe‐based nanophases in Ryugu and Orgueil

Hugues Leroux, Corentin Le Guillou, Maya Marinova, Sylvain Laforet, Jean‐christophe Viennet, Bahae‐eddine Mouloud, Adrien Teurtrie, Francisco de la Peña, Damien Jacob, Daniel Hallatt, Mario Pelaez Fernandez, David Troadec, Takaaki Noguchi, Toru Matsumoto, Akira Miyake, Yohei Igami, Mitsutaka Haruta, Hikaru Saito, Satoshi Hata, Yusuke Seto, Masaaki Miyahara, Naotaka Tomioka, Hope Ishii, John Bradley, Kenta Ohtaki, Elena Dobrică, Falko Langenhorst, Dennis Harries, Pierre Beck, Thi Phan, Rolando Rebois, Neyda Abreu, Jennifer Gray, Thomas Zega, Pierre‐m. Zanetta, Michelle Thompson, Rhonda Stroud, Kate Burgess, Brittany Cymes, John Bridges, Leon Hicks, Martin Lee, Luke Daly, Phil Bland, Michael Zolensky, David Frank, James Martinez, Akira Tsuchiyama, Masahiro Yasutake, Junya Matsuno, Shota Okumura, Itaru Mitsukawa, Kentaro Uesugi, Masayuki Uesugi, Akihisa Takeuchi, Mingqi Sun, Satomi Enju, Aki Takigawa, Tatsuhiro Michikami, Tomoki Nakamura, Megumi Matsumoto, Yusuke Nakauchi, Masanao Abe, Satoru Nakazawa, Tatsuaki Okada, Takanao Saiki, Satoshi Tanaka, Fuyuto Terui, Makoto Yoshikawa, Akiko Miyazaki, Aiko Nakato, Masahiro Nishimura, Tomohiro Usui, Toru Yada, Hisayoshi Yurimoto, Kazuhide Nagashima, Noriyuki Kawasaki, Naoya Sakamotoa, Ryuji Okazaki, Hikaru Yabuta, Hiroshi Naraoka, Kanako Sakamoto, Shogo Tachibana, Sei‐ichiro Watanabe, Yuichi Tsuda

Samples were recently collected from the carbonaceous asteroid (162173) Ryugu, by the Japan Aerospace Exploration Agency (JAXA) Hayabusa2 mission. They resemble CI chondrites material, thus showing clear evidence of extensive aqueous alteration attested by the widespread presence of a mixture of…

Meteoritics and Planetary Science, 2023, ⟨10.1111/maps.14101⟩. ⟨hal-04295482⟩

  • Communication dans un congrès

Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects

Kathia Harrouche, Lyes Ben-Hammou, François Grandpierron, Ajay Shanbhag, Etienne Okada, F Medjdoub

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436421⟩

  • Communication dans un congrès

Refractive Index Modification in Thin Film Barium Titanate-on-Insulator and Dry Etch Free Fabrication of Waveguide Devices

Yu Cao, Hong-Lin Lin, Haidong Liang, Andrew Bettiol, El Hadj Dogheche, Aaron Danner

We present refractive index modification methods in thin-film barium titanate-on-insulator with a resultant index change up to 0.17, and propose dry etch free device fabrication methods for optical waveguide devices.

2023 IEEE Photonics Conference (IPC), Nov 2023, Orlando, United States. pp.1-2, ⟨10.1109/IPC57732.2023.10360613⟩. ⟨hal-04419271⟩

  • Communication dans un congrès

[Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Lyes Ben Hammou, Kathia Harrouche, Etienne Okada, Fabrice Semond, Farid Medjdoub

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04397317⟩

  • Communication dans un congrès

Theoretical design for broadband parametric amplification in thin film lithium niobate

Pragati Aashna, Hong-Lin Lin, El Hadj Dogheche, Giacomo Benvenuti, Thanh N.K. Bui, Aaron Danner

2023 IEEE Photonics Conference (IPC), Nov 2023, Orlando, United States. pp.1-2, ⟨10.1109/IPC57732.2023.10360752⟩. ⟨hal-04419284⟩

  • Communication dans un congrès

Dislocation density reduction for vertical GaN devices on 200 mm Si

Ziyao Gao, Youssef Hamdaoui, Idriss Abid, F Medjdoub, Elke Meissner, Sven Besendörfer, Michael Heuken

14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04436407⟩