Publications

Affichage de 241 à 250 sur 15761


  • Article dans une revue

On SDN to Support the IEEE 802.11 and C-V2X-Based Vehicular Communications Use-Cases and Performance: A Comprehensive Survey

Galih Nugraha Nurkahfi, Andy Triwinarko, Budi Prawara, Nasrullah Armi, Tutun Juhana, Nana Rachmana Syambas, Eueung Mulyana, El Hadj Dogheche, Iyad Dayoub

<div xmlns="http://www.tei-c.org/ns/1.0"><p>SDN's ability to provide a global view, centralized control, and flexibility in orchestrating network infrastructure are expected to overcome challenges in the dynamic conditions of vehicular communications. We are looking to…

IEEE Access, 2024, 12, pp.95926 - 95958. ⟨10.1109/access.2023.3341092⟩. ⟨hal-04829618⟩

  • Communication dans un congrès

V2I Communication and Multi-Sensor Fusion for Real-Time Accurate Localization

moad dehbi, Mohamed Amine BOUZAIDI TIALI, Azeddine Benlamoudi, Marwane Ayaida, Yassin El Hillali, Atika Rivenq

This paper presents a novel localization approach that enhances accuracy and reduces error drift by integrating High Definition (HD) maps with multi-sensor data. Leveraging LiDAR and GPS data, our method cross-references detected physical landmarks with HD maps to improve precision. When sensor…

GLOBECOM 2024 - 2024 IEEE Global Communications Conference, Dec 2024, Cape Town, South Africa. pp.3225-3230, ⟨10.1109/GLOBECOM52923.2024.10901322⟩. ⟨hal-05039620⟩

  • Communication dans un congrès

Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC

M. Meneghini, M. Fregolent, N. Zagni, Y. Hamadoui, A. Marcuzzi, D. Favero, C. de Santi, M. Buffolo, M. Tomasi, G. Zappalà, E. Bahat-Treidel, E. Brusaterra, F. Brunner, O. Hilt, C. Huber, F Medjdoub, G. Meneghesso, G. Verzellesi, P. Pavan, E. Zanoni

We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and kV-range breakdown voltages; avalanche capability (a property of Si and SiC…

IEDM 2023 - 70th Annual IEEE International Electron Devices Meeting, Dec 2024, San Francisco, United States. pp.1-4, ⟨10.1109/IEDM50854.2024.10873536⟩. ⟨hal-04762052⟩

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