Publications

Affichage de 2911 à 2920 sur 16549


  • Article dans une revue

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stephane Vezian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier

We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major…

Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩. ⟨hal-03467546⟩

  • Communication dans un congrès

Oscillations du ressaut hydraulique circulaire

Aurélien Goerlinger, Farzam Zoueshtiagh, Alexis Duchesne

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607819⟩

  • Article dans une revue

How to tame a free non-laminar Savart sheet into individual jets?

Sofiene Oulded Taled Salah, Ghada Chouk, Alexis Duchesne, Nicolas de Cock, Khaoula Abrougui, Frédéric Lebeau, Stéphane Dorbolo

In this article, we study the division of a non-laminar Savart sheet into individual jets by mean of local disturbances. We paint a precise portrait of a free non-laminar Savart sheet formed by the vertical impact of a jet on a horizontal disk, its evolution in the air and its break up. We then…

International Journal of Multiphase Flow, 2022, 152, pp.104032. ⟨10.1016/j.ijmultiphaseflow.2022.104032⟩. ⟨hal-03667794v2⟩

  • Communication dans un congrès

Nanostructures wetting evaluation using ultra high frequency ultrasound

Abbas Salhab, Julien Carlier, Malika Toubal, Pierre Campistron, Marc Neyens, Bertrand Nongaillard, V. Thomy

Ultrasounds are a great tool for defects detection particularly for optically non-transparent materials. Hence, working at very high frequency (#GHz) allows the detection of nanoscale contact defects at the interface between two materials and especially in the presence of air, which has negligible…

SPIE OPTO conference 12002, Oxide-based Materials and Devices XIII, Jan 2022, San Francisco, United States. pp.58, ⟨10.1117/12.2620992⟩. ⟨hal-03620169⟩