Publications

Affichage de 3631 à 3640 sur 15761


  • Article dans une revue

Atmospheric pressure plasma hydrophobic silane-based coating to limit dairy fouling adhesion

Manon Saget, Guillaume Delaplace, Vincent Thomy, Yannick Coffinier, Maude Jimenez

GDR B2I, 2019, GDR B2I. ⟨hal-04400205⟩

  • Communication dans un congrès

Gigahertz frequency graphene transistor, high yield process and good stability under strain

Wei Wei, S. Mhedhbi, S. Salk, T. Levert, O. Txoperena, Emiliano Pallecchi, H. Happy

We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width (12µm,24µm and 50µm) are successfully fabricated on Kapton substrate. The…

14th European Microwave Integrated Circuits Conference, EuMIC 2019, Sep 2019, Paris, France. pp.208-211, ⟨10.23919/EuMIC.2019.8909548⟩. ⟨hal-03259628⟩

  • Communication dans un congrès

Nanothermometry by Means of Scanning Thermal Microscopy: Investigation of Electro-thermal Devices with Embedded Metallic Lines

G. Hamaoui, A. Pic, W. Zhao, A. Alkurdi, J. Yin, S. Gallois-Garreignot, M. Bugnet, J.F. Robillard, Séverine Gomès, Pierre-Olivier Chapuis

THERMINIC 26 (Thermal Investigation of ICs and Systems), Sep 2019, Lecco, Italy. ⟨hal-02379735⟩

  • Article dans une revue

NanoSIMS imaging of D/H ratios on FIB sections

Dan Lévy, Jérôme Aléon, Alice Aléon-Toppani, David Troadec, Rémi Duhamel, Adriana Gonzalez-Cano, Hélène Bureau, Hicham Khodja

The D/H ratio imaging of weakly hydrated minerals prepared as Focused Ion Beam (FIB) sections is developed in order to combine isotopic imaging by Nanoscale Secondary Ion Mass Spectrometry (NanoSIMS) of micrometer-sized grains with other nanoscale imaging techniques, such as Transmission Electron…

Analytical Chemistry, 2019, 91, pp.13763-13771. ⟨10.1021/acs.analchem.9b03134⟩. ⟨cea-02300872⟩

  • Communication dans un congrès

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Mehdi Rzin, Matteo Meneghini, Fabiana Rampazzo, Veronica Gao Zhan, Carlo de Santi, Riad Kabouche, Malek Zegaoui, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

We report on linearity and robustness of AlN/GaN HEMTs with ultra-thin 4nm AlN barrier for millimeter wave range applications. Static and dynamic I-V characteristics feature high peak transconductance (gmpeak) of 385 mS/mm, and the transconductance exhibits small changes with gate bias. Semi on-…

30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048726⟩

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