Publications

• Communication dans un congrès

Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment

Matteo Borga, Matteo Meneghini, Davide Benazzi, Eleonora Canato, Roland Püsche, Joff Derluyn, Idriss Abid, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni

The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its…

30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨hal-03048194⟩

• Poster de conférence

Optimizing heat harvesting in a membrane based planar µTEG: modelling and fabrication, & vice versa

Zahia Bougrioua, Ibrahim Bel-Hadj, Katir Ziouche

Micro-thermoelectric generators (µTEGs) are energy harvesting solutions to supply power for autonomous microsystems and other miniature applications. Based on a preliminary modeling we designed original all-Silicon µTEGs with a planar configuration in which the heat to harvest flows in-plane of a…

ECT 2019 – 17th European Conference on Thermoelectrics, Sep 2019, Limassol, Cyprus. . ⟨hal-02906736⟩

• Article dans une revue

Electrocaloric effect in Pb_0.3Ca_xSr_0.7-xTiO₃ ceramics near room temperature

Liuyang Han, Shao-Bo Guo, Shi-Guang Yan, Denis Remiens, Gen-Shui Wang, Xian-Lin Dong

The electrocaloric (EC) effect is strongly related to interaction of polarization and temperature changes, showing great potential in high-efficient solid state refrigeration. This work focuses on the Pb_0.3Ca_xSr_0.7-xTiO<sub>…

• Article dans une revue

Influence of doping level and surface states in tunneling spectroscopy of an In_0.53Ga_0.47As quantum well grown on p-type doped InP(001)

Nathali Alexandra Franchina Vergel, A. Tadjine, V. Notot, M. Mohr, A. Kouassi N’guissan, Christophe Coinon, Maxime Berthe, Louis Biadala, K. Sossoe, M. Dzagli, J.-C. Girard, Guillemin Rodary, L. Desplanque, R. Berndt, D. Stievenard, X. Wallart, Christophe Delerue, B. Grandidier

A steplike density of states is the hallmark of a two-dimensional electron gas. Here, scanning tunneling spectroscopy is used to investigate this property in the differential conductance of an In0.53Ga0.47As quantum well grown on p-type doped InP(001). We show that the appearance of a steplike…

• Communication dans un congrès

An adaptive threshold for change detection methods using a windowed entropy-based criterion - Application to fault-tolerant fusion in collaborative mobile robotics

Bilal Daass, Denis Pomorski, Kamel Haddadi

2019 4th Conference on Control and Fault Tolerant Systems (SysTol), Sep 2019, Casablanca, Morocco. pp.56-61, ⟨10.1109/SYSTOL.2019.8864768⟩. ⟨hal-02432105⟩

• Communication dans un congrès

Development of Highly Sensitive Niobium Nitride Resistive Thermal Probes for Nanoscale Thermal Microscopy

R. Swami, J. Paterson, D. Singhal, G. Julié, S. Le Denmat, J.-F. Motte, A. Alkurdi, J. Yin, J.F. Robillard, P.-O. Chapuis, S. Gomes, Olivier Bourgeois

E-MRS Fall Meeting Symposium "Nanomaterials thermal transport properties and nanothermodynamics", Sep 2019, Varsovie, Poland. ⟨hal-02379675⟩

• Communication dans un congrès

Supramolecular self-assembly on semiconductor surfaces and outlook

Younes Makoudi, Frank Palmino, Frédéric Cherioux, Christophe Krzeminski, Fabrizio Cleri, B. Grandidier

While spectacular molecular networks have been assembled on metal surfaces and then observed with scanning tunneling microscopy, there have been fewer studies of supramolecular networks on semiconductor surfaces, due to the high reactivity of their dangling bonds with organics. However, the…

European Materials Research Society, Sep 2019, Warsaw, Poland. ⟨hal-02380785⟩

• Communication dans un congrès

[Invited] GaN integration on silicon for high power devices

F Medjdoub

GaN integration on silicon for high power devices GaN-based switches will offer greater efficiency, power handling, and compactness as compared to the well-established, widely available silicon MOSFET power devices-all factors that are critical to meeting the needs of today's systems. In this…

European Materials Research Society (E-MRS) Fall 2019, Sep 2019, Warsaw, Poland. ⟨hal-03287384⟩

• Poster de conférence

Baseline-free repetitive pump-probe method for passive SHM

Marina Terzi, Lynda Chehami, Emmanuel Moulin, Nikolay Smagin

5th Cargèse Summer School « Passive Imaging and Monitoring in Wave Physics: from Seismology to Ultrasound », Sep 2019, Cargèse, France. ⟨hal-03595645⟩

• Communication dans un congrès

Newton’s Geneva Edition: Some Considerations on the Integral Calculus

Raffaele Pisano, Paolo Bussotti

39th SISFA 2019 International Conference, 11-13 September, SISFA Italian Society of the Historians of Physics and Astronomy & VIRGO, Sep 2019, Pisa (Italy), Italy. ⟨hal-04518956⟩