Publications

Affichage de 3661 à 3670 sur 16133


  • Communication dans un congrès

[Invited] Newton Principia Geneva Edition ([1739-1742] 1822)–2022. A Research Editorial Project

Raffaele Pisano

Invited talks at The Scuola Superiore Normale di Udine, 20th January, Italy, Scuola Superiore Normale di Udine, University of Udine, Italy, Jan 2020, Udine, Italy. ⟨hal-04518345⟩

  • Article dans une revue

Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment

Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo de Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Gaudenzio Meneghesso, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, F Medjdoub

We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon…

Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩. ⟨hal-03028138⟩

  • Article dans une revue

High performance of 3D silicon nanowires array@CrN for electrochemical capacitors

Abdelouadoud Guerra, Emile Haye, Amine Achour, Maxime Harnois, Toufik Hadjersi, Jean-Francois Colomer, Jean-Jacques Pireaux, Stéphane Lucas, Rabah Boukherroub

Silicon nanowire (SiNW) arrays were coated with chromium nitride (CrN) for use as supercapacitor electrodes. The CrN layer of different thicknesses was deposited onto SiNWs using bipolar magnetron sputtering method. The areal capacitance of the SiNWs-CrN, as measured in 0.5 M HSO electrolyte, was…

Nanotechnology, 2020, 31 (3), pp.035407. ⟨10.1088/1361-6528/ab4963⟩. ⟨hal-02367944⟩

  • Communication dans un congrès

[Invited] Exploiting the THz synchrotron radiation at its highest resolution and in a broadband fashion using heterodyne techniques

Marie-Aline Martin-Drumel, O. Pirali, S. Eliet, Z. Buchanan, J. Turut, P. Roy, Francis Hindle, Jean-Francois Lampin, Gaël Mouret

résumé

SOLEIL Users’ Meeting, Jan 2020, Gif sur Yvette, France. ⟨hal-04410769⟩

  • Article dans une revue

Vertical breakdown of GaN on Si due to V-pits

S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. Freitas, J. Derluyn, F Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Journal of Applied Physics, 2020, 127 (1), pp.015701. ⟨10.1063/1.5129248⟩. ⟨hal-02429980⟩