Publications

Affichage de 8601 à 8610 sur 16094


  • Communication dans un congrès

Hystérésis sur surfaces superomniphobes

Renaud Dufour, Philippe Brunet, Maxime Harnois, Rabah Boukherroub, Vincent Thomy, Vincent Senez

Journées Nationales du GDR Micro Nano Systèmes-Micro Nano Fluidique, 2012, Bordeaux, France. ⟨hal-00798843⟩

  • Communication dans un congrès

Characterization of the state of a droplet at a micro-textured silicon wafer using a finite difference time-domain (FDTD) method

N.M. Saad, B. Merheb, Georges Nassar, Pierre Campistron, Julien Carlier, M. Ajaka, Bertrand Nongaillard

In this study, we introduce a finite difference time domain method to study the propagation and reflection of an acoustic wave on smooth and micro-textured silicon surfaces in interaction with droplets in different states. This will enable numerical investigations of interfaces composed of…

International Symposium on Ultrasound in the Control of Industrial Processes, UCIP 2012, 2012, Madrid, Spain. pp.012052-1-4, ⟨10.1088/1757-899X/42/1/012052⟩. ⟨hal-00802626⟩

  • Communication dans un congrès

Third-order complex amplitudes tracking loop for slow fading channel estimation

H.Q. Shu, L. Ros, E.P. Simon

19th International Conference on Telecommunications, ICT 2012, 2012, Jounieh, Lebanon. pp.1-6, ⟨10.1109/ICTEL.2012.6221221⟩. ⟨hal-00802585⟩

  • Communication dans un congrès

Magnetostatic micro-actuator based on ultrasoft elastomeric membrane and copper-permalloy electrodeposited structures

Jérémy Streque, Abdelkrim Talbi, Clément Bonnerot, Philippe Pernod, Vladimir Preobrazhensky

This paper presents different designs of magnetostatic micro-actuators, based on both conventional and integrated micro-coils. A 3-dimensional magnetic circuit made of Permalloy is proposed in order to improve their efficiency. The mobile parts of the micro-actuators are made of ultrasoft…

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.1157-1160, ⟨10.1109/MEMSYS.2012.6170368⟩. ⟨hal-00801090⟩

  • Communication dans un congrès

Patterning process and actuation in open air of micro-beam actuator based on conducting IPNs

Alexandre Khaldi, Cedric Plesse, Caroline Soyer, Claude Chevrot, Dominique Teyssie, Frederic Vidal, Eric Cattan

SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2012, San Diego, United States. ⟨10.1117/12.915086⟩. ⟨hal-01829117⟩

  • Article dans une revue

Level repulsion and evanescent waves in sonic crystals

V. Romero-Garcia, Jerome O. Vasseur, Anne-Christine Hladky, Lluis Miquel Garcia-Raffi, J.V. Sanchez-Perez

This work theoretically and experimentally reports the evanescent connections between propagating bands in periodic acoustic materials. The complex band structures obtained by solving for the k(ω) problem reveal a complete interpretation of the propagation properties of these systems. The…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.212302-1-4. ⟨10.1103/PhysRevB.84.212302⟩. ⟨hal-00783380⟩

  • Communication dans un congrès

The transverse electromagnetic horn antenna as an efficient THz pulse emitter

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau, Jens Klier, Sabine Wohnsiedler, Joachim Jonuscheit, René Beigang

We have fabricated a new photoconductive antenna based on a transverse electromagnetic horn and low temperature grown GaAs. It has been tested with a time-domain terahertz setup. The horn was used as the emitter and a standard dipole photoconductive antenna was used as the receiver. The spectrum…

International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105067⟩. ⟨hal-00800486⟩

  • Communication dans un congrès

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is…

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68. ⟨hal-00671674⟩