Publications

• Communication dans un congrès

Electrode size effect under PFM characterization of PZT-film on silicon structures with micro- and nanometric top electrodes

S.L. Bravina, N.V. Morozovsky, E.A. Eliseev, A.N. Morozovska, J. Costecalde, Caroline Soyer, Denis Remiens, D. Deresmes

Joint 20th IEEE International Symposium on Applications of Ferroelectrics and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF-PFM-2011, 2011, Vancouver, Canada. pp.1-3, ⟨10.1109/ISAF.2011.6014002⟩. ⟨hal-00800402⟩

• Communication dans un congrès

Investigation of fabricating a LiNbO3 ultrasonic phased array transducer of more than 100 MHz

Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, S. Queste, Y.P. Huang

36°/Y-cut lithium niobate (LiNbO 3 ) single crystals have been patterned by means of Inductively Coupled Plasma (ICP) deep etching to create ultrasonic arrays resonating in the frequency range of 100-200 MHz. The limitation of etching aspect ratio and the minimum pitch are explored under the…

IEEE Sensors Conference, 2011, Limerick, Ireland. pp.1542-1545, ⟨10.1109/ICSENS.2011.6126901⟩. ⟨hal-00800448⟩

• Communication dans un congrès

Very low effective electromagnetic parameters lenses for the unlicensed 60 GHz band

Miguel Navarro-Cia, Miguel Beruete, Mario Sorolla, Tahsin Akalin, Nader Engheta

In this presentation advances on metallic lenses based on extreme electromagnetic parameters will be shown: either epsilon near zero or epsilon and mu near zero simultaneously. The former is generated by an array of continuous waveguides at cutoff, whereas the latter is composed of stacked…

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper M2E.6, 1-2, ⟨10.1109/irmmw-THz.2011.6104807⟩. ⟨hal-00800491⟩

• Communication dans un congrès

Spectral regrowth analysis in wideband polar architectures applied to software defined radio

A. Werquin, A. Frappe, J. Muller, A. Kaiser

9th IEEE International New Circuits and Systems Conference, NEWCAS 2011, 2011, Bordeaux, France. pp.305-308, ⟨10.1109/NEWCAS.2011.5981316⟩. ⟨hal-00800023⟩

• Communication dans un congrès

Caractérisation et analyse des effets de pièges électriques sur la fiabilité de HEMTS AlGaN/GaN

F. Berthet, Y. Guhel, H. Galous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.4C3, 1-4. ⟨hal-00603136⟩

• Communication dans un congrès

Développement d'un banc de caractérisation non linéaire dans le domaine fréquentiel pour la caractérisation et la modélisation de transistors de puissance

R. Ouhachi, A. Pottrain, T. Lacave, D. Ducatteau, P. Chevalier, D. Gloria, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 118, 2F6, 1-4. ⟨hal-00603134⟩

• Communication dans un congrès

Influence du retournement temporel sur la localisation au sein d'un réseau ad hoc

Michael Bocquet, Christophe Loyez, M. Friziel, N. Rolland

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 51, 6F3, 1-4. ⟨hal-00603135⟩

• Article dans une revue

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland

A report is presented on high-speed 100nm AlN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistive silicon substrate. The device delivers an extrinsic peak transconductance gm=530mS/mm, a maximum current of 1.74A/mm, and current gain and maximum oscillation cutoff…

Electronics Letters, 2011, 47 (24), pp.1345-1346. ⟨10.1049/el.2011.3166⟩. ⟨hal-00783379⟩

• Article dans une revue

X-ray combined analysis of fiber-textured and epitaxial Ba(Sr,Ti)O3 thin films deposited by radio frequency sputtering

Denis Remiens, L. Yang, Freddy Ponchel, Jean-François Legier, D. Chateigner, Gang Wang, X. Dong

Journal of Applied Physics, 2011, 109, pp.114106-1-11. ⟨10.1063/1.3592282⟩. ⟨hal-00603029⟩

• Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩