Publications

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Communication dans un congrès

Holistic modelling of heterogeneous embedded systems with high multi-discipline feedback : application to a precollision mitigation braking system

A. Leveque, François Pecheux, M.M. Louerat, H. Aboushady, F. Cenni, S. Scotti, A. Massouri, Laurent Clavier

Design, Automation & Test in Europe, DATE 2012, 2012, Dresden, Germany. pp.739-744. ⟨hal-00801059⟩

• Communication dans un congrès

[Invited] High frequency characterization of nanotechnologies : toward new instrumentations and techniques

Gilles Dambrine, Kamel Haddadi, Christophe Gaquière, T. Lasri, Y. Tagro, L. Poulain, A. Pottrain

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-4. ⟨hal-00801042⟩

• Communication dans un congrès

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801047⟩

• Communication dans un congrès

The thermal effect on the output conductance in AlGaN/GaN HEMT's

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

24th International Conference on Microelectronics, ICM 2012, 2012, Algiers, Algeria. pp.1-4, ⟨10.1109/ICM.2012.6471365⟩. ⟨hal-00814968⟩

• Proceedings/Recueil des communications

Historical Reflections on the Scale Ratio in the Galilean Trattato di Fortificazione

Raffaele Pisano, Danilo Capecchi

Proceedings of Explorations in the History of Machines and Mechanisms, 15, Springer Netherlands, pp.463-473, 2012, History of Mechanism and Machine Science, 978-94-007-4132-4. ⟨10.1007/978-94-007-4132-4_32⟩. ⟨hal-04513887⟩

• Article dans une revue

Characterization of the state of a droplet on a micro-textured silicon wafer using ultrasound

N. Saad, Renaud Dufour, Pierre Campistron, Georges Nassar, Julien Carlier, Maxime Harnois, B. Merheb, Rabah Boukherroub, V. Senez, J. Gao, Vincent Thomy, M. Ajaka, Bertrand Nongaillard

In this work, we propose acoustic characterization as a new method to probe wetting states on a superhydrophobic surface. The analysis of the multiple reflections of a longitudinal acoustic wave from solid-liquid and solid-vapor interfaces enables to distinguish between the two well known Cassie-…

Journal of Applied Physics, 2012, 112 (10), pp.104908. ⟨10.1063/1.4767223⟩. ⟨hal-00788344⟩

• Article dans une revue

Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

Etienne Herth, Emmanuelle Algre, Pascal Tilmant, Martin François, Christophe Boyaval, Bernard Legrand

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is…

IEEE Transactions on Nanotechnology, 2012, 11 (4), pp.854-859. ⟨10.1109/TNANO.2012.2196802⟩. ⟨hal-00787415⟩

• Article dans une revue

Mechanism of formation of the misfit dislocations at the cubic materials interfaces

Y. Wang, P. Ruterana, S. Kret, Jie Chen, S. El Kazzi, L. Desplanque, X. Wallart

Applied Physics Letters, 2012, 100, pp.262110-1-5. ⟨10.1063/1.4731787⟩. ⟨hal-00787021⟩

• Article dans une revue

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this paper, we report static electric drain-source current-voltage measurements for different gate voltages and at different temperatures, performed on Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors (HEMT). The results show the presence of kink and collapse effects. We have…

Journal of Applied Physics, 2012, 111 (7), pp.073713. ⟨10.1063/1.3702458⟩. ⟨hal-00787870⟩