Publications

Affichage de 8651 à 8660 sur 16133


  • Communication dans un congrès

A 60 GHz UWB impulse radio transmitter with integrated antenna in CMOS 65nm SOI technology

A. Siligaris, N. Deparis, R. Pilard, D. Gloria, Christophe Loyez, N. Rolland, L. Dussopt, Jérôme Lanteri, R. Beck, P. Vincent

This work describes an UWB impulse transmitter with integrated antenna in the 60 GHz band implemented in CMOS65nm SOI technology. The transmitter aims low-power short-range high data-rate communication systems for fast-downloading applications. It consists of an oscillator that is switched on-and-…

11th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems, SiRF 2011, Jan 2011, Phoenix, AZ, United States. pp.153-156, ⟨10.1109/SIRF.2011.5719303⟩. ⟨hal-00799975⟩

  • Article dans une revue

Tunable dual-mode DFB laser for millimetre-wave signal generation

S. Ginestar, F. van Dijk, A. Accard, F. Poingt, F. Pommereau, L. Le Gouezigou, O. Le Gouezigou, F. Lelarge, B. Rousseau, J. Landreau, Jean-Pierre Vilcot, G.-H. Duan

Highly compact dual-mode semiconductor laser sources get more and more attention in different application fields such as radar, security and personal communication systems. When the two generated wavelengths are detected within the same photodetector, an electrical signal which frequency is the…

European Physical Journal: Applied Physics, 2011, 53 (3), pp.33609-1-5. ⟨10.1051/epjap/2011100065⟩. ⟨hal-00672783⟩

  • Communication dans un congrès

B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

S. Gautier, M. Abid, T. Moudakir, G. Orsal, V. Ravindran, O. Naciri, A. Migan-Dubois, Z. Djebbour, David Troadec, A. Soltani, G. Patriarche, A. Ougazzaden

SPIE 2011, Jan 2011, San Francisco, United States. ⟨hal-00578877⟩

  • Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩