Publications

• Communication dans un congrès

Dielectric response of nanoscale organic monolayer : a new tool for spectroscopy

S. Pleutin, D. Tondelier, S. Lenfant, D. Vuillaume

8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125580⟩

• Communication dans un congrès

Inelastic electron tunnelling in metal/alkylsilane/silicon juntions

C. Petit, G. Salace, S. Lenfant, D. Vuillaume

8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125598⟩

• Communication dans un congrès

Silicon-molecules-metal junctions by nanotransfer printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, D. Vuillaume

8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125601⟩

• Communication dans un congrès

Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions

D.K. Aswal, C. Petit, G. Salace, David Guérin, S. Lenfant, J.V. Yakhmi, D. Vuillaume

Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain. ⟨hal-00125602⟩

• Communication dans un congrès

Pentacene thin film transistors on self-assembled monolayers gate dielectrics

K. Lmimouni, R. Bianchini, S. Lenfant, David Troadec, D. Vuillaume

ElecMol'05, 2005, Grenoble, France. ⟨hal-00125605⟩

• Article dans une revue

Ultrasonic cavitation in thin liquid layers

A. Moussatov, C. Granger, Bertrand Dubus

Ultrasonics Sonochemistry, 2005, 12, pp.415-422. ⟨hal-00124472⟩

• Article dans une revue

Benzocyclobutene wafer bonding for III-V nanophotonic guiding structures

D. Lauvernier, Jean-Pierre Vilcot, S. Garidel, S. Mc Murtry, Didier Decoster

Electronics Letters, 2005, 41, pp.1170-1172. ⟨hal-00125663⟩

• Article dans une revue

Behavior of a common source traveling wave amplifier versus temperature in SOI technology

M. Si Moussa, C. Pavageau, P. Simon, Francois Danneville, J. Russat, N. Fel, J.P. Raskin, D. Vanoenacker-Janvier

EuMA - Journal of the European Microwave Association, 2005, 1, pp.288-292. ⟨hal-00125165⟩

• Communication dans un congrès

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Gilles Dambrine, Daniel Gloria, Patrick Scheerer, Christine Raynaud, Francois Danneville, Sylvie Lepilliet, Alexandre Siligaris, Guillaume Pailloncy, Baudouin Martineau, Emmanuel Bouhana, Raphael Valentin

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f t = 210 GHz and microwave low noise and high gain properties (NF min = 0.8 dB and G ass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the…

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100. ⟨hal-00125303⟩

• Communication dans un congrès

Origin and control of spurious Lamb wave resonances in Bulk Acoustic Wave (BAW) resonators

A. Volatier, C. Pigot, P. Ancey, Bertrand Dubus

WCU/UI'05 Joint Conference, 2005, Beijing, China. ⟨hal-00124962⟩